Charge trap generation in LPCVD oxides under high field stressing
Bhat, N., Apte, P.P., Saraswat, K.C.
Published in IEEE transactions on electron devices (01.04.1996)
Published in IEEE transactions on electron devices (01.04.1996)
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Journal Article
Automatic synthesis of equipment recipes from specified wafer-state transitions
Davis, J.C., Mozumder, P.K., Burch, R., Fernando, C., Apte, P.P., Saxena, S., Rao, S., Vasanth, K.
Published in IEEE transactions on semiconductor manufacturing (01.11.1998)
Published in IEEE transactions on semiconductor manufacturing (01.11.1998)
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Journal Article
Conference Proceeding
Rapid thermal multiprocessing for a programmable factory for adaptable manufacturing of ICs
Saraswat, K.C., Apte, P.P., Booth, L., Yunzhong Chen, Dankoski, P.C.P., Degertekin, F.L., Franklin, G.F., Khuri-Yakub, B.T., Moslehi, M.M., Schaper, C., Gyugyi, P.J., Lee, Y.J., Pei, J., Wood, S.C.
Published in IEEE transactions on semiconductor manufacturing (01.05.1994)
Published in IEEE transactions on semiconductor manufacturing (01.05.1994)
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Journal Article
Study Of Integration Issues Of Ti Salicide Process With Preamorphization For Sub-0.18 /spl mu/m Gate Length CMOS Technologies
Kittl, J.A., Chatterjee, A., Chen, I.-C., Dixit, G.A., Apte, P.P., Prinslow, D.A., Hong, Q.Z.
Published in Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications (1997)
Published in Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications (1997)
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Conference Proceeding
An integrated approach for accurate simulation and modeling of the silicide-source/drain structure and the silicide-diffusion contact resistance
Apte, P.P., Potla, S., Prinslow, D.A., Pollack, G., Scott, D., Varahramyan, K.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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Conference Proceeding