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Hybrid quantum systems based on magnonics
Lachance-Quirion, Dany, Tabuchi, Yutaka, Gloppe, Arnaud, Usami, Koji, Nakamura, Yasunobu
Published in Applied physics express (01.07.2019)
Published in Applied physics express (01.07.2019)
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A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Zhang, Ziyi, Kushimoto, Maki, Sakai, Tadayoshi, Sugiyama, Naoharu, Schowalter, Leo J., Sasaoka, Chiaki, Amano, Hiroshi
Published in Applied Physics Express (07.11.2019)
Published in Applied Physics Express (07.11.2019)
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Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Takano, Takayoshi, Mino, Takuya, Sakai, Jun, Noguchi, Norimichi, Tsubaki, Kenji, Hirayama, Hideki
Published in Applied physics express (01.03.2017)
Published in Applied physics express (01.03.2017)
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Indication of current-injection lasing from an organic semiconductor
Sandanayaka, Atula S. D., Matsushima, Toshinori, Bencheikh, Fatima, Terakawa, Shinobu, Potscavage, William J., Qin, Chuanjiang, Fujihara, Takashi, Goushi, Kenichi, Ribierre, Jean-Charles, Adachi, Chihaya
Published in Applied physics express (01.06.2019)
Published in Applied physics express (01.06.2019)
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Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation
Wong, Matthew S., Lee, Changmin, Myers, Daniel J., Hwang, David, Kearns, Jared A., Li, Thomas, Speck, James S., Nakamura, Shuji, DenBaars, Steven P.
Published in Applied physics express (01.09.2019)
Published in Applied physics express (01.09.2019)
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Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays
Pasayat, Shubhra S., Gupta, Chirag, Wong, Matthew S., Ley, Ryan, Gordon, Michael J., DenBaars, Steven P., Nakamura, Shuji, Keller, Stacia, Mishra, Umesh K.
Published in Applied physics express (01.01.2021)
Published in Applied physics express (01.01.2021)
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Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Kaun, Stephen W., Oshima, Yuichi, Short, Dane B., Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.04.2017)
Published in Applied physics express (01.04.2017)
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Development of X-ray-induced afterglow characterization system
Yanagida, Takayuki, Fujimoto, Yutaka, Ito, Takashi, Uchiyama, Koro, Mori, Kuniyoshi
Published in Applied physics express (01.06.2014)
Published in Applied physics express (01.06.2014)
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Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
Ahmadi, Elaheh, Koksaldi, Onur S., Zheng, Xun, Mates, Tom, Oshima, Yuichi, Mishra, Umesh K., Speck, James S.
Published in Applied physics express (01.07.2017)
Published in Applied physics express (01.07.2017)
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Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
Murakami, Hisashi, Nomura, Kazushiro, Goto, Ken, Sasaki, Kohei, Kawara, Katsuaki, Thieu, Quang Tu, Togashi, Rie, Kumagai, Yoshinao, Higashiwaki, Masataka, Kuramata, Akito, Yamakoshi, Shigenobu, Monemar, Bo, Koukitu, Akinori
Published in Applied physics express (01.01.2015)
Published in Applied physics express (01.01.2015)
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All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3
Kokubun, Yoshihiro, Kubo, Shohei, Nakagomi, Shinji
Published in Applied physics express (01.09.2016)
Published in Applied physics express (01.09.2016)
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Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio
Otsuka, Fumio, Miyamoto, Hironobu, Takatsuka, Akio, Kunori, Shinji, Sasaki, Kohei, Kuramata, Akito
Published in Applied physics express (01.01.2022)
Published in Applied physics express (01.01.2022)
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Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs
Hwang, David, Mughal, Asad, Pynn, Christopher D., Nakamura, Shuji, DenBaars, Steven P.
Published in Applied physics express (01.03.2017)
Published in Applied physics express (01.03.2017)
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Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
Sato, Kosuke, Yasue, Shinji, Yamada, Kazuki, Tanaka, Shunya, Omori, Tomoya, Ishizuka, Sayaka, Teramura, Shohei, Ogino, Yuya, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.03.2020)
Published in Applied physics express (01.03.2020)
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Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system
Tsuchiya, Takashi, Nakayama, Tomonobu, Ariga, Katsuhiko
Published in Applied physics express (01.10.2022)
Published in Applied physics express (01.10.2022)
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4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2
Bhattacharyya, Arkka, Sharma, Shivam, Alema, Fikadu, Ranga, Praneeth, Roy, Saurav, Peterson, Carl, Seryogin, Geroge, Osinsky, Andrei, Singisetti, Uttam, Krishnamoorthy, Sriram
Published in Applied physics express (01.06.2022)
Published in Applied physics express (01.06.2022)
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Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
Joishi, Chandan, Rafique, Subrina, Xia, Zhanbo, Han, Lu, Krishnamoorthy, Sriram, Zhang, Yuewei, Lodha, Saurabh, Zhao, Hongping, Rajan, Siddharth
Published in Applied physics express (01.03.2018)
Published in Applied physics express (01.03.2018)
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