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Lattice thermal conductivity of β-, α- and κ- Ga2O3: a first-principles computational study
Yang, Jinfeng, Xu, Yongze, Wang, Xiaonan, Zhang, Xu, He, Yang, Sun, Huarui
Published in Applied physics express (01.01.2024)
Published in Applied physics express (01.01.2024)
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Remote detection of a rotator based on rotational Doppler effect
Zhai, Yanwang, Fu, Shiyao, Zhang, Jianqiang, Lv, Yanlai, Zhou, Heng, Gao, Chunqing
Published in Applied physics express (01.02.2020)
Published in Applied physics express (01.02.2020)
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Ab initio study of carrier mobility of few-layer InSe
Sun, Chong, Xiang, Hui, Xu, Bo, Xia, Yidong, Yin, Jiang, Liu, Zhiguo
Published in Applied physics express (01.03.2016)
Published in Applied physics express (01.03.2016)
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High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates
Hussain, Kamal, Mamun, Abdullah, Floyd, Richard, Alam, Md Didarul, Liao, Michael E., Huynh, Kenny, Wang, Yekan, Goorsky, Mark, Chandrashekhar, MVS, Simin, Grigory, Khan, Asif
Published in Applied physics express (31.01.2023)
Published in Applied physics express (31.01.2023)
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Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1
Wakimoto, Daiki, Lin, Chia-Hung, Thieu, Quang Tu, Miyamoto, Hironobu, Sasaki, Kohei, Kuramata, Akito
Published in Applied physics express (23.03.2023)
Published in Applied physics express (23.03.2023)
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Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and synchrotron X-ray topography
Sdoeung, Sayleap, Sasaki, Kohei, Kawasaki, Katsumi, Hirabayashi, Jun, Kuramata, Akito, Kasu, Makoto
Published in Applied physics express (01.03.2021)
Published in Applied physics express (01.03.2021)
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High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates
Da, Bingcheng, Herath Mudiyanselage, Dinusha, Wang, Dawei, He, Ziyi, Fu, Houqiang
Published in Applied physics express (01.10.2024)
Published in Applied physics express (01.10.2024)
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Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown
Gilankar, Advait, Islam, Ahmad Ehteshamul, McCartney, Martha R., Katta, Abishek, Das, Nabasindhu, Smith, David J., Kalarickal, Nidhin Kurian
Published in Applied physics express (01.04.2024)
Published in Applied physics express (01.04.2024)
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Robust micromagnet design for fast electrical manipulations of single spins in quantum dots
Yoneda, Jun, Otsuka, Tomohiro, Takakura, Tatsuki, Pioro-Ladrière, Michel, Brunner, Roland, Lu, Hong, Nakajima, Takashi, Obata, Toshiaki, Noiri, Akito, Palmstrøm, Christopher J., Gossard, Arthur C., Tarucha, Seigo
Published in Applied physics express (01.08.2015)
Published in Applied physics express (01.08.2015)
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Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
Kojima, Kazunobu, Takashima, Shinya, Edo, Masaharu, Ueno, Katsunori, Shimizu, Mitsuaki, Takahashi, Tokio, Ishibashi, Shoji, Uedono, Akira, Chichibu, Shigefusa F.
Published in Applied physics express (01.06.2017)
Published in Applied physics express (01.06.2017)
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Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
Kinoshita, Toru, Obata, Toshiyuki, Nagashima, Toru, Yanagi, Hiroyuki, Moody, Baxter, Mita, Seiji, Inoue, Shin-ichiro, Kumagai, Yoshinao, Koukitu, Akinori, Sitar, Zlatko
Published in Applied physics express (01.09.2013)
Published in Applied physics express (01.09.2013)
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Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates
Okumura, Hironori, Watanabe, Yasuhiro, Shibata, Tomohiko
Published in Applied physics express (01.06.2023)
Published in Applied physics express (01.06.2023)
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High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}
Zhao, Yuji, Tanaka, Shinichi, Pan, Chih-Chien, Fujito, Kenji, Feezell, Daniel, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Applied physics express (01.08.2011)
Published in Applied physics express (01.08.2011)
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Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy
Sasaki, Kohei, Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Kuramata, Akito, Yamakoshi, Shigenobu
Published in Applied physics express (01.12.2017)
Published in Applied physics express (01.12.2017)
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High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In,Fe)Sb
Tu, Nguyen Thanh, Hai, Pham Nam, Anh, Le Duc, Tanaka, Masaaki
Published in Applied physics express (01.06.2018)
Published in Applied physics express (01.06.2018)
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Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Ban, Kazuhito, Yamamoto, Jun-ichi, Takeda, Kenichiro, Ide, Kimiyasu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Applied physics express (01.05.2011)
Published in Applied physics express (01.05.2011)
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