VIA-4 reliability of VPE long-wavelength lasers and detectors
Olsen, G.H., DiGiuseppe, N.J., Webb, P.P., Zamerowski, T.J., Appert, J.R., Harvey, M.G.
Published in IEEE transactions on electron devices (01.11.1983)
Published in IEEE transactions on electron devices (01.11.1983)
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Journal Article
Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions
Enstrom, R. E., Nuese, C. J., Appert, J. R., Gannon, J. J.
Published in Journal of the Electrochemical Society (01.01.1974)
Published in Journal of the Electrochemical Society (01.01.1974)
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Journal Article
V-6 1.7 mu m heterojunction lasers and photodiodes of In(.53 < /inf > Ga(.47 < /inf > As/InP
Nuese, C J, Enstrom, R E, Appert, J R
Published in IEEE transactions on electron devices (01.09.1977)
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Published in IEEE transactions on electron devices (01.09.1977)
Journal Article