A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT
Phillips, S.D., Thrivikraman, T., Appaswamy, A., Sutton, A.K., Cressler, J.D., Vizkelethy, G., Dodd, P., Reed, R.A.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Understanding Radiation- and Hot Carrier-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress
Peng Cheng, Jun Bongim, Sutton, A., Appaswamy, A., Chendong Zhu, Cressler, J.D., Schrimpf, R.D., Fleetwood, D.M.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs
Appaswamy, A., Bellini, M., Wei-Min Lance Kuo, Peng Cheng, Jiahui Yuan, Chendong Zhu, Cressler, J.D., Guofu Niu, Joseph, A.J.
Published in IEEE transactions on electron devices (01.06.2007)
Published in IEEE transactions on electron devices (01.06.2007)
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Journal Article
Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation
Diestelhorst, R.M., Phillips, S.D., Appaswamy, A., Sutton, A.K., Cressler, J.D., Pellish, J.A., Reed, R.A., Vizkelethy, G., Marshall, P.W., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices
Bongim Jun, Diestelhorst, R.M., Bellini, M., Espinel, G., Appaswamy, A., Prakash, A.P.G., Cressler, J.D., Dakai Chen, Schrimpf, R.D., Fleetwood, D.M., Turowski, M., Raman, A.
Published in IEEE transactions on nuclear science (01.12.2006)
Published in IEEE transactions on nuclear science (01.12.2006)
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Journal Article
The Radiation Tolerance of Strained Si/SiGe n-MODFETs
Madan, A., Bongim Jun, Diestelhorst, R.M., Appaswamy, A., Cressler, J.D., Schrimpf, R.D., Fleetwood, D.M., Marshall, P.W., Isaacs-Smith, T., Williams, J.R., Koester, S.J.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
Overshoot-induced failures in forward-biased diodes: A new challenge to high-speed ESD design
Farbiz, F., Appaswamy, A., Salman, A. A., Boselli, G.
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01.04.2013)
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Conference Proceeding
Engineering optimal high current characteristics of high voltage DENMOS
Salman, Akram A., Farbiz, F., Appaswamy, A., Kunz, H., Boselli, G., Dissegna, M.
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
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Conference Proceeding
The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI
Bellini, M., Bongim Jun, Sutton, A.K., Appaswamy, A.C., Peng Cheng, Cressler, J.D., Marshall, P.W., Schrimpf, R.D., Fleetwood, D.M., El-Kareh, B., Balster, S., Steinmann, P., Yasuda, H.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers
Peng Cheng, Grens, C.M., Appaswamy, A., Chakraborty, P.S., Cressler, J.D.
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
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Conference Proceeding
A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance
Thrivikraman, T.K., Appaswamy, A., Phillips, S.D., Sutton, A.K., Wilcox, E.P., Cressler, J.D.
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2009)
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2009)
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Conference Proceeding
A novel base current phenomenon in SiGe HBTs operating in inverse mode
Appaswamy, A., Cressler, J.D., Guofu Niu
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
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Conference Proceeding
Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments
Phillips, S.D., Sutton, A.K., Appaswamy, A., Bellini, M., Cressler, J.D., Grillo, A., Vizkelethy, G., Dodd, P., McCurdy, M., Reed, R., Marshall, P.
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
Published in 2009 IEEE International Reliability Physics Symposium (01.04.2009)
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Conference Proceeding
A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs
Peng Cheng, Chendong Zhu, Appaswamy, A., Cressler, J.D.
Published in IEEE transactions on device and materials reliability (01.09.2007)
Published in IEEE transactions on device and materials reliability (01.09.2007)
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Magazine Article
The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices
Appaswamy, A., Bongim Jun, Diestelhorst, R.M., Espinel, G., Gnana Prakash, A.P., Cressler, J.D., Marshall, P.W., Marshall, C.J., Qingqing Liang, Freeman, G., Isaacs-Smith, T., Williams, J.R.
Published in 2006 IEEE Radiation Effects Data Workshop (01.07.2006)
Published in 2006 IEEE Radiation Effects Data Workshop (01.07.2006)
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Conference Proceeding
Cryogenic matching performance of 90 nm MOSFETs
Appaswamy, A., Chakraborty, P., Cressler, J.D.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs
Peng Cheng, Appaswamy, A., Bellini, M., Cressler, J.D.
Published in 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01.01.2008)
Published in 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01.01.2008)
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Conference Proceeding
Reverse Active Operation of 200 GHz SiGe HBTs
Kuo, W.-M.L., Appaswamy, A., Krithivasan, R., Bellini, M., Cressler, J.D.
Published in 2005 International Semiconductor Device Research Symposium (2005)
Published in 2005 International Semiconductor Device Research Symposium (2005)
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Conference Proceeding