Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage
Tschanz, J.W., Kao, J.T., Narendra, S.G., Nair, R., Antoniadis, D.A., Chandrakasan, A.P., De, V.
Published in IEEE journal of solid-state circuits (01.11.2002)
Published in IEEE journal of solid-state circuits (01.11.2002)
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Journal Article
A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs
Nayfeh, H.M., Hoyt, J.L., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
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Journal Article
On Backscattering and Mobility in Nanoscale Silicon MOSFETs
Changwook Jeong, Antoniadis, D.A., Lundstrom, M.S.
Published in IEEE transactions on electron devices (01.11.2009)
Published in IEEE transactions on electron devices (01.11.2009)
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Journal Article
(Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design
Fitzgerald, Eugene A, Lee, K.E., Yoon, Soon-Fatt, Chua, S.J., Tan, Chuan Seng, Ng, G.I., Zhou, X., Gong, Xiao, Chang, J.S., Peh, L.S., Boon, C.C., Antoniadis, D.a., Yadav, Sachin, Nguyen, X.S., Kohen, D.a., Kumar, Annie, Zhang, Li, Lee, Kwang Hong, Liu, Z.H., Chain, S.B., Ge, T, Choi, P.
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes
Nayfeh, O.M., Chleirigh, C.N., Hoyt, J.L., Antoniadis, D.A.
Published in IEEE electron device letters (01.05.2008)
Published in IEEE electron device letters (01.05.2008)
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Journal Article
Strained Si on insulator technology: from materials to devices
Langdo, T.A, Currie, M.T, Cheng, Z.-Y, Fiorenza, J.G, Erdtmann, M, Braithwaite, G, Leitz, C.W, Vineis, C.J, Carlin, J.A, Lochtefeld, A, Bulsara, M.T, Lauer, I, Antoniadis, D.A, Somerville, M
Published in Solid-state electronics (01.08.2004)
Published in Solid-state electronics (01.08.2004)
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Journal Article
Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si Schottky contacts
Jin, L.J., Pey, K.L., Choi, W.K., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.
Published in Thin solid films (10.05.2006)
Published in Thin solid films (10.05.2006)
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Journal Article
Conference Proceeding
Back-gated CMOS on SOIAS for dynamic threshold voltage control
Yang, I.Y., Vieri, C., Chandrakasan, A., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.05.1997)
Published in IEEE transactions on electron devices (01.05.1997)
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Journal Article
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
Guangrui Xia, Nayfeh, H.M., Lee, M.L., Fitzgerald, E.A., Antoniadis, D.A., Anjum, D.H., Jian Li, Hull, R., Klymko, N., Hoyt, J.L.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
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Journal Article
Tradeoff Between Mobility and Subthreshold Characteristics in Dual-Channel Heterostrucure n- and p-MOSFETs
Jung, J., Chleirigh, C.N., Yu, S., Olubuyide, O.O., Hoyt, J., Antoniadis, D.A.
Published in IEEE electron device letters (01.08.2004)
Published in IEEE electron device letters (01.08.2004)
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Journal Article