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Giorgione, V., Quintero Mendez, O., Pinas, A., Ansley, W., Thilaganathan, B.
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Published in Ultrasound in obstetrics & gynecology (01.08.2022)
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A unified approach to RF and microwave noise parameter modeling in bipolar transistors
Niu, G., Cressler, J.D., Shiming Zhang, Ansley, W.E., Webster, C.S., Harame, D.L.
Published in IEEE transactions on electron devices (01.11.2001)
Published in IEEE transactions on electron devices (01.11.2001)
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Does the extent of neck surgery based on preoperative calcitonin level influence survival in medullary thyroid carcinoma: a retrospective tertiary centre experience
Ansley, W, Kamyab, A, Noden, L, Odutoye, B, Williamson, P, Wong, K H, Dent, P, Sharma, A, Weller, A, Pitiyage, G, Ofo, E
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Published in Annals of the Royal College of Surgeons of England (25.04.2024)
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Risk of preterm birth with routine first-trimester combined screening for pre-eclampsia
Giorgione, V, Quintero Mendez, O, Pinas, A, Ansley, W, Thilaganathan, B
Published in Ultrasound in obstetrics & gynecology (20.04.2022)
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Published in Ultrasound in obstetrics & gynecology (20.04.2022)
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Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications
Guofu Niu, Ansley, W.E., Shiming Zhang, Cressler, J.D., Webster, C.S., Groves, R.A.
Published in IEEE transactions on electron devices (01.08.1999)
Published in IEEE transactions on electron devices (01.08.1999)
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Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology
Roldan, J.M., Ansley, W.E., Cressler, J.D., Clark, S.D., Nguyen-Ngoc, D.
Published in IEEE transactions on nuclear science (01.12.1997)
Published in IEEE transactions on nuclear science (01.12.1997)
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Journal Article
An investigation of the spatial location of proton-induced traps in SiGe HBTs
Roldan, J.M., Guofu Niu, Ansley, W.E., Cressler, J.D., Clark, S.D., Ahlgren, D.C.
Published in IEEE transactions on nuclear science (01.12.1998)
Published in IEEE transactions on nuclear science (01.12.1998)
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IBM z14: Enabling physical design in 14-nm technology for high performance, high-reliability microprocessors
Wolpert, D., Behnen, E., Sigal, L., Chan, Y., Tellez, G. E., Bradley, D., Serton, R., Veerabhadraiah, R., Ansley, W., Bianchi, A., Dhanwada, N., Lee, S., Scheuermann, M., Wiedemeier, G., Davis, J., Werner, T., Darden, L., Barkley, K., Gray, M., Guzowski, M., DeHond, M., Schell, T., Tsapepas, S., Phan, D., Acharya, K., Zitz, J. A., Shi, H. F., Berry, C., Warnock, J., Wood, M. H., Averill, R. M.
Published in IBM journal of research and development (01.03.2018)
Published in IBM journal of research and development (01.03.2018)
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Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's
Ansley, W.E., Cressler, J.D., Richey, D.M.
Published in IEEE transactions on microwave theory and techniques (01.05.1998)
Published in IEEE transactions on microwave theory and techniques (01.05.1998)
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Noise modeling and SiGe profile design tradeoffs for RFapplications HBTs
Niu, Guofu, Zhang, Shiming, Cressler, J D, Joseph, A J, Fairbanks, J S, Larson, L E, Webster, C S, Ansley, W E, Harame, D L
Published in IEEE transactions on electron devices (01.11.2000)
Published in IEEE transactions on electron devices (01.11.2000)
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Journal Article
Noise modeling and SiGe profile design tradeoffs for RF applications HBTs
Niu, Guofu, Zhang, Shiming, Cressler, J D, Joseph, A J, Fairbanks, J S, Larson, LE, Webster, C S, Ansley, W E, Harame, D L
Published in IEEE transactions on electron devices (01.01.2000)
Published in IEEE transactions on electron devices (01.01.2000)
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Journal Article
Noise parameter modeling and SiGe profile design tradeoffs for RF applications
Guofu Niu, Shiming Zhang, Cressler, J.D., Joseph, A.J., Fairbanks, J.S., Larson, L.E., Webster, C.S., Ansley, W.E., Harame, D.L.
Published in 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397) (2000)
Published in 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397) (2000)
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Conference Proceeding
Evaluation of liquid-metal jets as the conductor in a rep-rated, exploding-fuse opening switch
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Conference Proceeding