High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V
Andreev, A.N., Anikin, M.M., Zelenin, V.V., Ivanov, P.A., Lebedev, A.A., Rastegaeva, M.G., Savkina, N.S., Strel'chuk, A.M., Syrkin, A.L., Chelnokov, V.E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
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Journal Article
Power silicon carbide devices based on Lely grown substrates
Lebedev, A.A., Andreev, A.N., Anikin, M.M., Rastegaeva, M.G., Savkina, N.S., Strelchuk, A.M., Syrkin, A.L., Tregubova, A.S., Chelnokov, V.E.
Published in Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 (1995)
Published in Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 (1995)
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Conference Proceeding