Origin of Post-Irradiation V ₜₕ-Shift Variability in 3-D NAND Memory Array
Kumar, Mondol Anik, Raquibuzzaman, Md, Buddhanoy, Matchima, Boykin, Timothy, Ray, Biswajit
Published in IEEE transactions on nuclear science (01.04.2024)
Published in IEEE transactions on nuclear science (01.04.2024)
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Journal Article
Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure
Kumar, Mondol Anik, Ray, Biswajit
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs
Sikder, Bejoy, Lim, Jia Hao, Kumar, Mondol Anik, Padovani, Andrea, Haverty, Michael, Kamal, Uday, Raghavan, Nagarajan, Larcher, Luca, Pey, Kin-Leong, Baten, Md Zunaid
Published in IEEE electron device letters (01.01.2021)
Published in IEEE electron device letters (01.01.2021)
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Journal Article
Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory
Ray, Biswajit, Buddhanoy, Matchima, Kumar, Mondol Anik
Published in 2023 IEEE International Memory Workshop (IMW) (01.05.2023)
Published in 2023 IEEE International Memory Workshop (IMW) (01.05.2023)
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Conference Proceeding
Origin of post-irradiation Vth-shift variability in 3D-NAND memory array
Kumar, Mondol Anik, Raquibuzzaman, Md, Buddhanoy, Matchima, Boykin, Timothy, Ray, Biswajit
Published in IEEE transactions on nuclear science (12.11.2023)
Published in IEEE transactions on nuclear science (12.11.2023)
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Journal Article
Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories
Kumar, Mondol Anik, Raquibuzzaman, Md, Buddhanoy, Matchima, Wasiolek, Maryla, Hattar, Khalid, Boykin, Timothy, Ray, Biswajit
Published in 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) (01.07.2022)
Published in 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) (01.07.2022)
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Conference Proceeding
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited)
Padovani, Andrea, Pesic, Milan, Nardi, Federico, Milo, Valerio, Larcher, Luca, Kumar, Mondol Anik, Baten, Md Zunaid
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers
Padovani, Andrea, Pesic, Milan, Kumar, Mondol Anik, Blomme, Pieter, Subirats, Alexandre, Vadakupudhupalayam, Senthil, Baten, Zunaid, Larcher, Luca
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
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Conference Proceeding
Exploring Cross-Temperature Reliability in 3D NAND Through Layer-Dependent Bit Error Analysis
Kumar, Mondol Anik, Ray, Biswajit
Published in 2024 IEEE 8th International Test Conference India (ITC India) (21.07.2024)
Published in 2024 IEEE 8th International Test Conference India (ITC India) (21.07.2024)
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Conference Proceeding
Statistical Simulation to Predict Variability of TANOS Program/Erase Characteristics for Non-Volatile Memory Applications
Baten, Md Zunaid, Kumar, Mondol Anik, Padovani, Andrea, Larcher, Luca, Pramanik, Dipankar
Published in 2019 Electron Devices Technology and Manufacturing Conference (EDTM) (01.03.2019)
Published in 2019 Electron Devices Technology and Manufacturing Conference (EDTM) (01.03.2019)
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Conference Proceeding