화학식 의 화합물
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Year of Publication 18.07.2023
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Year of Publication 18.07.2023
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기판, 애노드층, 캐소드층, 적어도 하나의 제1 방출층, 및 금속 착화합물을 포함하는 정공 주입층을 포함하는 유기 전자 장치
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Year of Publication 28.11.2022
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Year of Publication 28.11.2022
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N-DOPED SEMICONDUCTING MATERIAL COMPRISING PHOSPHINE OXIDE MATRIX AND METAL DOPANT
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Year of Publication 30.08.2016
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Year of Publication 30.08.2016
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ORGANIC ELECTRONIC DEVICE COMPRISING A COMPOUND OF FORMULA (1), DISPLAY DEVICE COMPRISING THE ORGANIC ELECTRONIC DEVICE AS WELL AS COMPOUNDS OF FORMULA (1) FOR USE IN ORGANIC ELECTRONIC DEVICES
Angermann, Jens, Runge, Steffen, Rosenow, Thomas, Luschtinetz, Regina, Uvarov, Vladimir, Langguth, Oliver, Hummert, Markus
Year of Publication 28.12.2023
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Year of Publication 28.12.2023
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ORGANIC ELECTRONIC DEVICE COMPRISING A COMPOUND OF FORMULA (1), DISPLAY DEVICE COMPRISING THE ORGANIC ELECTRONIC DEVICE AS WELL AS COMPOUNDS OF FORMULA (1) FOR USE IN ORGANIC ELECTRONIC DEVICES
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Year of Publication 20.09.2023
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Year of Publication 20.09.2023
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Organic Electronic Device Comprising a Substrate, an Anode Layer, a Cathode Layer, at Least One First Emission Layer, and a Hole Injection Layer That Comprises a Metal Complex
Park, Moo Jin, Angermann, Jens, Gilge, Kai, Runge, Steffen, Rosenow, Thomas, Luschtinetz, Regina, Steudel, Annette, Uvarov, Vladimir
Year of Publication 06.07.2023
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Year of Publication 06.07.2023
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ORGANIC ELECTRONIC DEVICE COMPRISING A COMPOUND OF FORMULA (1), DISPLAY DEVICE COMPRISING THE ORGANIC ELECTRONIC DEVICE AS WELL AS COMPOUNDS OF FORMULA (1) FOR USE IN ORGANIC ELECTRONIC DEVICES
UVAROV, Vladimir, RUNGE, Steffen, ANGERMANN, Jens, ROSENOW, Thomas, HUMMERT, Markus, LANGGUTH, Oliver, LUSCHTINETZ, Regina
Year of Publication 19.05.2022
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Year of Publication 19.05.2022
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AN ORGANIC ELECTRONIC DEVICE COMPRISING A SUBSTRATE, AN ANODE LAYER, A CATHODE LAYER, AT LEAST ONE FIRST EMISSION LAYER, AND A HOLE INJECTION LAYER THAT COMPRISES A METAL COMPLEX
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Year of Publication 25.01.2023
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Year of Publication 25.01.2023
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AN ORGANIC ELECTRONIC DEVICE COMPRISING A SUBSTRATE, AN ANODE LAYER, A CATHODE LAYER, AT LEAST ONE FIRST EMISSION LAYER, AND A HOLE INJECTION LAYER THAT COMPRISES A METAL COMPLEX
GILGE, Kai, STEUDEL, Annette, UVAROV, Vladimir, RUNGE, Steffen, ANGERMANN, Jens, ROSENOW, Thomas, LUSCHTINETZ, Regina, PARK, Moo Jin
Year of Publication 23.09.2021
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Year of Publication 23.09.2021
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AN ORGANIC ELECTRONIC DEVICE COMPRISING A SUBSTRATE, AN ANODE LAYER, A CATHODE LAYER, AT LEAST ONE FIRST EMISSION LAYER, AND A HOLE INJECTION LAYER THAT COMPRISES A METAL COMPLEX
GILGE, Kai, STEUDEL, Annette, UVAROV, Vladimir, RUNGE, Steffen, ANGERMANN, Jens, ROSENOW, Thomas, LUSCHTINETZ, Regina, PARK, Moo Jin
Year of Publication 22.09.2021
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Year of Publication 22.09.2021
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N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
Angermann, Jens, Rothe, Carsten, Zöllner, Mike, Denker, Ulrich, Gilge, Kai, Kalisz, Tomas, Canzler, Tobias, Werner, Ansgar, Rosenow, Thomas, Bloom, Francisco, Birnstock, Jan, Fadhel, Omrane
Year of Publication 01.07.2021
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Year of Publication 01.07.2021
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Organic electronic device comprising substrate, anode layer, cathode layer, at least one first light emitting layer, and hole injection layer containing metal complex
RUNGE STEFFEN, KILGER KAI, LUSCHETZE, R, ROSENOW THOMAS, PARK MOO JIN, ANGERMANN JENS, GINE, UVAROV VLADIMIR
Year of Publication 02.12.2022
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Year of Publication 02.12.2022
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N-DOPED SEMICONDUCTING MATERIAL COMPRISING PHOSPHINE OXIDE MATRIX AND METAL DOPANT
CANZLER, Tobias, ZÖLLNER, Mike, WERNER, Ansgar, GILGE, Kai, BIRNSTOCK, Jan, FADHEL, Omrane, KALISZ, Tomas, ANGERMANN, Jens, BLOOM, Francisco, ROSENOW, Thomas, DENKER, Ulrich, ROTHE, Carsten
Year of Publication 17.04.2019
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Year of Publication 17.04.2019
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N-doped semiconducting material comprising phosphine oxide matrix and metal dopant
Angermann, Jens, Rothe, Carsten, Zöllner, Mike, Denker, Ulrich, Gilge, Kai, Kalisz, Tomas, Canzler, Tobias, Werner, Ansgar, Rosenow, Thomas, Bloom, Francisco, Birnstock, Jan, Fadhel, Omrane
Year of Publication 21.02.2018
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Year of Publication 21.02.2018
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An organic electronic device comprising a substrate, an anode layer, a cathode layer, at least one first emission layer, and a hole injection layer that comprises a metal complex
LUSCHTINETZ, REGINA, PARK, MOO-JIN, ROSENOW, THOMAS, ANGERMANN, JENS, STEUDEL, ANNETTE, UVAROV, VLADIMIR, GILGE, KAI, RUNGE, STEFFEN
Year of Publication 01.01.2022
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Year of Publication 01.01.2022
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N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
Fadhel Omrane, Angermann Jens, Rosenow Thomas, Birnstock Jan, Werner Ansgar, Bloom Francisco, Rothe Carsten, Denker Ulrich, Canzler Tobias, Zöllner Mike, Kalisz Tomas, Gilge Kai
Year of Publication 03.11.2016
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Year of Publication 03.11.2016
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N-DOPED SEMICONDUCTING MATERIAL COMPRISING PHOSPHINE OXIDE MATRIX AND METAL DOPANT
CANZLER, Tobias, ZÖLLNER, Mike, WERNER, Ansgar, GILGE, Kai, BIRNSTOCK, Jan, FADHEL, Omrane, KALISZ, Tomas, ANGERMANN, Jens, BLOOM, Francisco, ROSENOW, Thomas, DENKER, Ulrich, ROTHE, Carsten
Year of Publication 02.11.2016
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Year of Publication 02.11.2016
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DOPED SEMICONDUCTING MATERIAL COMPRISING PHOSPHINE OXIDE MATRIX AND METAL DOPANT
BIRNSTOCK, JAN, KALISZ, TOMAS, ROTHE, CARSTEN, ZLLNER, MIKE, DENKER, ULRICH, FADHEL, OMRANE, CANZLER, TOBIAS, ANGERMANN, JENS, ROSENOW, THOMAS, GILGE, KAI, BLOOM, FRANCISCO, WERNER, ANSGAR
Year of Publication 03.06.2016
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Year of Publication 03.06.2016
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