Initial rise of transient electroluminescence in doped Alq3 films
Uddin, A., Lee, C. B., Andersson, T. G.
Published in Physica status solidi. A, Applications and materials science (01.10.2010)
Published in Physica status solidi. A, Applications and materials science (01.10.2010)
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Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering
Zhang, J.X., Chen, Y.Z., Cheng, H., Uddin, A., Yuan, Shu, Pita, K., Andersson, T.G.
Published in Thin solid films (03.01.2005)
Published in Thin solid films (03.01.2005)
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Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN
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Conference Proceeding
Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy
Liu, X.Y., Jänes, P., Holmström, P., Aggerstam, T., Lourdudoss, S., Thylén, L., Andersson, T.G.
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Conference Proceeding
Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy
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Conference Proceeding
Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy
Liu, X.Y., Aggerstam, T., Jänes, P., Holmström, P., Lourdudoss, S., Thylén, L., Andersson, T.G.
Published in Journal of crystal growth (01.04.2007)
Published in Journal of crystal growth (01.04.2007)
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Conference Proceeding
Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications
Liu, X.Y., Fälth, J.F., Andersson, T.G., Holmström, P., Jänes, P., Ekenberg, U., Thylén, L.
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
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Conference Proceeding
Influence of dislocation density on photoluminescence intensity of GaN
Fälth, J.F., Gurusinghe, M.N., Liu, X.Y., Andersson, T.G., Ivanov, I.G., Monemar, B., Yao, H.H., Wang, S.C.
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
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Conference Proceeding
Cracks in GaN/AlN multiple quantum well structures grown by MBE
Liu, X Y, Aggerstam, T, Holmström, P, Lourdudoss, S, Andersson, T G
Published in 17th Int. Vacuum Congress and 13th Int. Conf. on Surface Science, Stockholm, Sweden (01.03.2008)
Published in 17th Int. Vacuum Congress and 13th Int. Conf. on Surface Science, Stockholm, Sweden (01.03.2008)
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Conference Proceeding
Diffusion of nitrogen in gallium arsenide
Stolwijk, N.A., Bösker, G., Andersson, T.G., Södervall, U.
Published in Physica. B, Condensed matter (31.12.2003)
Published in Physica. B, Condensed matter (31.12.2003)
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Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates
Soderstrom, J R, Cumming, M M, Yao, J -Y, Andersson, T G
Published in Semiconductor science and technology (01.03.1992)
Published in Semiconductor science and technology (01.03.1992)
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Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy
KIM, Hyonju, FALTH, Fredrik J, ANDERSSON, Thorvald G
Published in Journal of electronic materials (01.10.2001)
Published in Journal of electronic materials (01.10.2001)
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Study of Alq3 thermal evaporation rate effects on the OLED
Lee, C.B., Uddin, A., Hu, X., Anderssonb, T.G.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
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