Search Results - "Amstatt, Benoit" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

광전자 소자 및 그 제조 방법

광전자 소자 및 그 제조 방법

by AMSTATT BENOIT, LASSIAZ TIMOTHEE, TCHOULFIAN PIERRE, MALIER YOANN
Year of Publication 29.01.2024

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Patent

Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)

Lattice Relaxation and Dislocation Reduction in MBE CdTe(211)B/Ge(211)

by Badano, Giacomo, Gergaud, Patrice, Robin, Ivan C., Baudry, Xavier, Amstatt, Benoît, Gemain, Fréderique
Published in Journal of electronic materials (01.07.2010)

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Journal Article Conference Proceeding

3차원 발광 다이오드를 갖는 광전자 장치

3차원 발광 다이오드를 갖는 광전자 장치

by AMSTATT BENOIT, TCHOULFIAN PIERRE, GILET PHILIPPE
Year of Publication 07.08.2020

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Patent

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR STRUCTURE

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR STRUCTURE

by AMSTATT BENOIT, DAUDIN BRUNO JULES
Year of Publication 26.02.2016

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Patent

3차원 반도체 소자의 에피택셜 성장에 적합한 핵형성 구조물

3차원 반도체 소자의 에피택셜 성장에 적합한 핵형성 구조물

by AMSTATT BENOIT, HENAFF EWEN, HYOT BERANGERE, DUPONT FLORIAN
Year of Publication 12.08.2019

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Patent

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

by AMSTATT BENOIT, HYOT BERANGERE, DUPONT FLORIAN
Year of Publication 14.08.2017

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Patent

3차원 다이오드들을 포함하는 광전자 디바이스

3차원 다이오드들을 포함하는 광전자 디바이스

by AMSTATT BENOIT, LACAVE THOMAS, BONO HUBERT, HENAFF EWEN, HYOT BERANGERE, BEIX VINCENT, DUPONT FLORIAN, GILET PHILIPPE
Year of Publication 31.07.2019

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Patent

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

by AMSTATT BENOIT, DECHOUX NATHALIE, GILET PHILIPPE
Year of Publication 03.08.2015

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Patent

METHOD FOR GROWING AT LEAST ONE NANOWIRE FROM A LAYER OF A TRANSITION NITRIDE METAL, SAID LAYER BEING OBTAINED IN TWO STEPS

METHOD FOR GROWING AT LEAST ONE NANOWIRE FROM A LAYER OF A TRANSITION NITRIDE METAL, SAID LAYER BEING OBTAINED IN TWO STEPS

by AMSTATT BENOIT, HYOT BERANGERE, DUPONT FLORIAN, ARMAND MARIE FRANCOISE
Year of Publication 15.07.2015

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Patent

ELECTRONIC DEVICE COMPRISING NANOWIRE(S), PROVIDED WITH A TRANSITION METAL BUFFER LAYER, METHOD FOR GROWING AT LEAST ONE NANOWIRE AND METHOD FOR PRODUCING A DEVICE

ELECTRONIC DEVICE COMPRISING NANOWIRE(S), PROVIDED WITH A TRANSITION METAL BUFFER LAYER, METHOD FOR GROWING AT LEAST ONE NANOWIRE AND METHOD FOR PRODUCING A DEVICE

by AMSTATT BENOIT, HYOT BERANGERE, DUPONT FLORIAN, ARMAND MARIE FRANCOISE
Year of Publication 15.07.2015

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Patent

OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD

OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD

by AMSTATT, Benoit, TCHOULFIAN, Pierre, NAPIERALA, Jerome
Year of Publication 24.08.2023

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Patent

DISPOSITIF OPTOELECTRONIQUE A MICROFILS OU NANOFILS

DISPOSITIF OPTOELECTRONIQUE A MICROFILS OU NANOFILS

by AMSTATT BENOIT
Year of Publication 27.05.2016

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Patent

METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE

METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE

by AMSTATT, Benoit, KUMARESAN, Vishnuvarthan, CHIKHAOUI, Walf, GRUART, Marion, GILET, Philippe
Year of Publication 17.04.2024

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Patent

Optoelectronic device, comprises microwires or nanowires having active portions between insulated portions, where the active portions are surrounded by active layers adapted to emit or receive light and have inclined flanks

Optoelectronic device, comprises microwires or nanowires having active portions between insulated portions, where the active portions are surrounded by active layers adapted to emit or receive light and have inclined flanks

by AMSTATT BENOIT
Year of Publication 04.07.2014

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Patent

Optoelectronic device, comprises microwires or nanowires having active portions between insulated portions, where the active portions are surrounded by active layers adapted to emit or receive light and have inclined flanks

Optoelectronic device, comprises microwires or nanowires having active portions between insulated portions, where the active portions are surrounded by active layers adapted to emit or receive light and have inclined flanks

by AMSTATT BENOIT
Year of Publication 04.07.2014

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Patent

ELECTRONIC DEVICE COMPRISING NANOWIRE(S), PROVIDED WITH A TRANSITION METAL BUFFER LAYER, METHOD FOR GROWING AT LEAST ONE NANOWIRE AND METHOD FOR PRODUCING A DEVICE

ELECTRONIC DEVICE COMPRISING NANOWIRE(S), PROVIDED WITH A TRANSITION METAL BUFFER LAYER, METHOD FOR GROWING AT LEAST ONE NANOWIRE AND METHOD FOR PRODUCING A DEVICE

by ARMAND, Marie-Françoise, AMSTATT, Benoit, DUPONT, Florian, HYOT, Bérangère
Year of Publication 24.08.2022

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Patent

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

by Amstatt, Benoit, Dupont, Florian, Hyot, Bérangère
Year of Publication 02.07.2019

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Patent

PROCEDE DE REALISATION D'UN DISPOSITIF OPTOELECTRONIQUE COMPRENANT DES DIODES ELECTROLUMINESCENTES HOMOGENES EN DIMENSIONS

PROCEDE DE REALISATION D'UN DISPOSITIF OPTOELECTRONIQUE COMPRENANT DES DIODES ELECTROLUMINESCENTES HOMOGENES EN DIMENSIONS

by AMSTATT, BENOIT, TCHOULFIAN, PIERRE
Year of Publication 18.12.2020

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Patent

Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements

Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements

by Hyot, Berangere, Amstatt, Benoit, Dupont, Florian, Henaff, Ewen
Year of Publication 13.10.2020

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Patent

Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure

Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure

by Amstatt Benoit, Daudin Bruno-Jules
Year of Publication 31.01.2017

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Patent

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