Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps
Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh
Published in IEEE transactions on electron devices (01.11.2022)
Published in IEEE transactions on electron devices (01.11.2022)
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Journal Article
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh
Published in Scientific reports (08.03.2022)
Published in Scientific reports (08.03.2022)
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Journal Article
Active defects in MOS devices on 4H-SiC: A critical review
Amini Moghadam, Hamid, Dimitrijev, Sima, Han, Jisheng, Haasmann, Daniel
Published in Microelectronics and reliability (01.05.2016)
Published in Microelectronics and reliability (01.05.2016)
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Journal Article
Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs
Moghadam, Hamid Amini, Dimitrijev, Sima, Jisheng Han, Haasmann, Daniel, Aminbeidokhti, Amirhossein
Published in IEEE transactions on electron devices (01.08.2015)
Published in IEEE transactions on electron devices (01.08.2015)
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Journal Article
Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-SiC MOS Capacitors
Pande, Peyush, Dimitrijev, Sima, Haasmann, Daniel, Amini Moghadam, Hamid, Tanner, Philip, Han, Jisheng
Published in IEEE transactions on electron devices (01.04.2019)
Published in IEEE transactions on electron devices (01.04.2019)
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Journal Article
Determination of first-order landfill gas modeling parameters and uncertainties
Amini, Hamid R., Reinhart, Debra R., Mackie, Kevin R.
Published in Waste management (Elmsford) (01.02.2012)
Published in Waste management (Elmsford) (01.02.2012)
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Journal Article
Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
Dimitrijev, Sima, Han, Jisheng, Moghadam, Hamid Amini, Aminbeidokhti, Amirhossein
Published in MRS bulletin (01.05.2015)
Published in MRS bulletin (01.05.2015)
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Journal Article
Electrically Active Defects in SiC Power MOSFETs
Chaturvedi, Mayank, Haasmann, Daniel, Moghadam, Hamid Amini, Dimitrijev, Sima
Published in Energies (Basel) (01.02.2023)
Published in Energies (Basel) (01.02.2023)
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Journal Article
A Figure of Merit for Selection of the Best Family of SiC Power MOSFETs
Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh
Published in Electronics (Basel) (01.05.2022)
Published in Electronics (Basel) (01.05.2022)
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Journal Article
AlGaN/GaN 2-D Electron Gas for Highly Sensitive and High-Temperature Current Sensing
Nguyen, Hong Quan, Dinh, Toan, Moghadam, Hamid Amini, Nguyen, Tuan Khoa, Nguyen, Thanh, Han, Jisheng, Dimitrijev, Sima, Zhu, Yong, Nguyen, Nam-Trung, Dao, Dzung Viet
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Journal Article
Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs
Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Kumar Hanumanthappa, Anil, Amini Moghadam, Hamid, Haasmann, Daniel, Jisheng Han, Yan Shen, Xiangang Xu
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
A Method for Selection of Power MOSFETs to Minimize Power Dissipation
Jadli, Utkarsh, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Pande, Peyush, Chaturvedi, Mayank, Dimitrijev, Sima
Published in Electronics (Basel) (01.09.2021)
Published in Electronics (Basel) (01.09.2021)
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Journal Article
A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
Dimitrijev, Sima, Han, Ji Sheng, Haasmann, Daniel, Pande, Peyush, Moghadam, Hamid Amini, Tanner, Philip
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article