Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype
Mynbaeva, M. G., Amelchuk, D. G., Smirnov, A. N., Nikitina, I. P., Lebedev, S. P., Davydov, V. Yu, Lebedev, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2023)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2023)
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TEM investigation of the interface formation during transfer of 3C-SiC(001) layer onto 6H-SiC(0001) wafer
Myasoedov, A. V., Mynbaeva, M. G., Lebedev, S. P., Priobrazhenskii, S. Iu, Amelchuk, D. G., Kirilenko, D. A., Lebedev, A. A.
Published in Journal of applied physics (21.09.2024)
Published in Journal of applied physics (21.09.2024)
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