Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions
Penta, Naresh K., Peethala, B.C., Amanapu, H.P., Melman, A., Babu, S.V.
Published in Colloids and surfaces. A, Physicochemical and engineering aspects (20.07.2013)
Published in Colloids and surfaces. A, Physicochemical and engineering aspects (20.07.2013)
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Journal Article
Cobalt Polishing with Reduced Galvanic Corrosion at Copper/Cobalt Interface Using Hydrogen Peroxide as an Oxidizer in Colloidal Silica-Based Slurries
Peethala, B. C., Amanapu, H. P., Lagudu, U. R. K., Babu, S. V.
Published in Journal of the Electrochemical Society (01.01.2012)
Published in Journal of the Electrochemical Society (01.01.2012)
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Journal Article
Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
Sagi, K. V., Amanapu, H. P., Alety, S. R., Babu, S. V.
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
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Journal Article
Abrasive-Free Polishing for Extreme Ultraviolet Lithography Mask Substrates
Amanapu, H. P., Lagudu, U. R. K., John-Kadaksham, A., Babu, S. V., Teki, R.
Published in ECS journal of solid state science and technology (01.01.2013)
Published in ECS journal of solid state science and technology (01.01.2013)
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Journal Article
Chemical Mechanical Polishing for Extreme Ultraviolet Lithography Mask Substrates
Amanapu, Hari Prasad, Lagudu, Uma Rames, Teki, Ranganath, John-Kadaksham, Arun, Babu, Suryadevara V.
Published in ECS transactions (01.04.2013)
Published in ECS transactions (01.04.2013)
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Journal Article
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
Xie, R., Montanini, P., Akarvardar, K., Tripathi, N., Haran, B., Johnson, S., Hook, T., Hamieh, B., Corliss, D., Wang, J., Miao, X., Sporre, J., Fronheiser, J., Loubet, N., Sung, M., Sieg, S., Mochizuki, S., Prindle, C., Seo, S., Greene, A., Shearer, J., Labonte, A., Fan, S., Liebmann, L., Chao, R., Arceo, A., Chung, K., Cheon, K., Adusumilli, P., Amanapu, H. P., Bi, Z., Cha, J., Chen, H.-C, Conti, R., Galatage, R., Gluschenkov, O., Kamineni, V., Kim, K., Lee, C., Lie, F., Liu, Z., Mehta, S., Miller, E., Niimi, H., Niu, C., Park, C., Park, D., Raymond, M., Sahu, B., Sankarapandian, M., Siddiqui, S., Southwick, R., Sun, L., Surisetty, C., Tsai, S., Whang, S., Xu, P., Xu, Y., Yeh, C., Zeitzoff, P., Zhang, J., Li, J., Demarest, J., Arnold, J., Canaperi, D., Dunn, D., Felix, N., Gupta, D., Jagannathan, H., Kanakasabapathy, S., Kleemeier, W., Labelle, C., Mottura, M., Oldiges, P., Skordas, S., Standaert, T., Yamashita, T., Colburn, M., Na, M., Paruchuri, V., Lian, S., Divakaruni, R., Gow, T., Lee, S., Knorr, A., Bu, H., Khare, M.
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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