Search Results - "Amalraj, Frank Wilson" :: K.UTB vyhledávací portál

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

by Amalraj, Frank Wilson, Dhasiyan, Arun Kumar, Lu, Yi, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Kondo, Hiroki, Sekine, Makoto, Ikarashi, Nobuyuki, Hori, Masaru
Published in AIP advances (01.11.2018)

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Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radical-enhanced metalorganic chemical vapor deposition)

by Dhasiyan, Arun Kumar, Jayaprasad, Swathy, Amalraj, Frank Wilson, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru
Published in Japanese Journal of Applied Physics (01.11.2023)

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Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

by Dhasiyan, Arun Kumar, Amalraj, Frank Wilson, Jayaprasad, Swathy, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru
Published in Scientific reports (13.05.2024)

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Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias

by Wilson, Amalraj Frank, Wakejima, Akio, Egawa, Takashi
Published in Applied physics express (01.08.2013)

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Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon with Buffer Thickness Dependence

by Wilson, Amalraj Frank, Wakejima, Akio, Egawa, Takashi
Published in Applied physics express (01.05.2013)

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Origin and Appearance of Defective Pits in the Gate--Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si

by Wilson, Amalraj Frank, Wakejima, Akio, Egawa, Takashi
Published in Applied physics express (01.11.2013)

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METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE

by AMALRAJ Frank Wilson, HORI Masaru, ODA Osamu
Year of Publication 02.02.2023

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Influence of chamber pressure on the crystal quality of homo-epitaxial GaN grown by radical-enhanced MOCVD (REMOCVD)

by Amalraj, Frank Wilson, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Hori, Masaru
Published in Journal of crystal growth (01.11.2020)

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Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ Measurements

by Wakejima, Akio, Wilson, Amalraj Frank, Mase, Suguru, Joka, Takuya, Egawa, Takashi
Published in IEEE transactions on electron devices (01.10.2013)

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Effect of N 2 /H 2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

by Amalraj, Frank Wilson, Dhasiyan, Arun Kumar, Lu, Yi, Shimizu, Naohiro, Oda, Osamu, Ishikawa, Kenji, Kondo, Hiroki, Sekine, Makoto, Ikarashi, Nobuyuki, Hori, Masaru
Published in AIP advances (01.11.2018)

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Journal Article