A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control
Dietrich, S., Angerbauer, M., Ivanov, M., Gogl, D., Hoenigschmid, H., Kund, M., Liaw, C., Markert, M., Symanczyk, R., Altimime, L., Bournat, S., Mueller, G.
Published in IEEE journal of solid-state circuits (01.04.2007)
Published in IEEE journal of solid-state circuits (01.04.2007)
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Balancing SET/RESET Pulse for >\hbox^ Endurance in \hbox\hbox 1T1R Bipolar RRAM
Yang Yin Chen, Govoreanu, B., Goux, L., Degraeve, R., Fantini, A., Kar, G. S., Wouters, D. J., Groeseneken, G., Kittl, J. A., Jurczak, M., Altimime, L.
Published in IEEE transactions on electron devices (01.12.2012)
Published in IEEE transactions on electron devices (01.12.2012)
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Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode
Chen, Y.Y., Goux, L., Pantisano, L., Swerts, J., Adelmann, C., Mertens, S., Afanasiev, V.V., Wang, X.P., Govoreanu, B., Degraeve, R., Kubicek, S., Paraschiv, V., Verbrugge, B., Jossart, N., Altimime, L., Jurczak, M., Kittl, J., Groeseneken, G., Wouters, D.J.
Published in Microelectronic engineering (01.12.2013)
Published in Microelectronic engineering (01.12.2013)
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Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells
Collaert, N., Aoulaiche, M., De Keersgieter, A., De Wachter, B., Altimime, L., Jurczak, M.
Published in Solid-state electronics (01.11.2011)
Published in Solid-state electronics (01.11.2011)
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Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application
Kar, G. S., Fantini, A., Chen, Y.-Y, Paraschiv, V., Govoreanu, B., Hody, H., Jossart, N., Tielens, H., Brus, S., Richard, O., Vandeweyer, T., Wouters, D. J., Altimime, L., Jurczak, M.
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
Collaert, N, Aoulaiche, M, De Wachter, B, Rakowski, M, Redolfi, A, Brus, S, De Keersgieter, A, Horiguchi, N, Altimime, L, Jurczak, M
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Hot hole induced damage in 1T-FBRAM on bulk FinFET
Aoulaiche, M, Collaert, N, Mercha, A, Rakowski, M, De Wachter, B, Groeseneken, G, Altimime, L, Jurczak, M, Lu, Z
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells
Collaert, N, Aoulaiche, M, De Keersgieter, A, De Wachter, B, Jurczak, M, Altimime, L
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
Published in 2010 Proceedings of the European Solid State Device Research Conference (01.09.2010)
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Conference Proceeding
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
Goux, L., Fantini, A., Kar, G., Chen, Y., Jossart, N., Degraeve, R., Clima, S., Govoreanu, B., Lorenzo, G., Pourtois, G., Wouters, D. J., Kittl, J. A., Altimime, L., Jurczak, M.
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
Govoreanu, B., Redolfi, A., Zhang, L., Adelmann, C., Popovici, M., Clima, S., Hody, H., Paraschiv, V., Radu, I. P., Franquet, A., Liu, J.-C, Swerts, J., Richard, O., Bender, H., Altimime, L., Jurczak, M.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Reliability study in capacitor less 1T-RAM cells on SOI
Aoulaiche, M, Collaert, N, Simoen, E, Mercha, A, De Wachter, B, Bourdelle, K K, Nguyen, B.-Y, Boedt, F, Delprat, D, Jurczak, M, Altimime, L
Published in 2010 IEEE International SOI Conference (SOI) (01.10.2010)
Published in 2010 IEEE International SOI Conference (SOI) (01.10.2010)
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Conference Proceeding
Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments
Degraeve, R, Roussel, P, Goux, L, Wouters, D, Kittl, J, Altimime, L, Jurczak, M, Groeseneken, G
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
Performance and reliability of Ultra-Thin HfO2-based RRAM (UTO-RRAM)
Govoreanu, B., Ajaykumar, A., Lipowicz, H., Chen, Y.-Y, Liu, J.-C, Degraeve, R., Zhang, L., Clima, S., Goux, L., Radu, I. P., Fantini, A., Raghavan, N., Kar, G.-S, Kim, W., Redolfi, A., Wouters, D. J., Altimime, L., Jurczak, M.
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
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Conference Proceeding
Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell
Goux, L, Opsomer, K, Schuitema, R, Degraeve, R, Muller, R, Detavernier, C, Wouters, D J, Jurczak, M, Altimime, L, Kittl, J A
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
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Conference Proceeding
Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages
Lu, Z, Collaert, N, Aoulaiche, M, De Wachter, B, De Keersgieter, A, Fossum, J G, Altimime, L, Jurczak, M
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM
Chen, Y Y, Pourtois, G, Wang, X P, Adelmann, C, Goux, L, Govoreanu, B, Pantisano, L, Kubicek, S, Altimime, L, Jurczak, M, Kittl, J A, Groeseneken, G, Wouters, D J
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
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Conference Proceeding
Advanced Capacitor Dielectrics: Towards 2x nm DRAM
Kim, M.-S, Popovici, M, Swerts, J, Pawlak, M A, Tomida, K, Kaczer, B, Opsomer, K, Schaekers, M, Tielens, H, Vrancken, C, Van Elshocht, S, Debusschere, I, Altimime, L, Kittl, J A
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01.05.2011)
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Conference Proceeding
Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Pawlak, M A, Popovici, M, Swerts, J, Tomida, K, Min-Soo Kim, Kaczer, B, Opsomer, K, Schaekers, M, Favia, P, Bender, H, Vrancken, C, Govoreanu, B, Demeurisse, C, Wan-Chih Wang, Afanas'ev, V V, Debusschere, I, Altimime, L, Kittl, J A
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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Conference Proceeding
Reliability of low current filamentary HfO2 RRAM discussed in the framework of the hourglass SET/RESET model
Degraeve, R., Pourtois, G., Cosemans, S., Groeseneken, G., Jurczak, M., Altimime, L., Fantini, A., Chen, Y. Y., Clima, S., Govoreanu, B., Goux, L., Wouters, D. J., Roussel, Ph, Kar, G. S.
Published in 2012 IEEE International Integrated Reliability Workshop Final Report (01.10.2012)
Published in 2012 IEEE International Integrated Reliability Workshop Final Report (01.10.2012)
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Conference Proceeding
(Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications
Swerts, Johan, Salimullah, M.M., Popovici, M., Kim, M.-S., Pawlak, M.A., Delabie, Annelies, Schaekers, M., Tomida, K., Kaczer, B., Opsomer, K., Vrancken, C., Debusschere, I, Altimime, L., Kittl, J.A., Van Elshocht, Sven
Published in ECS transactions (01.01.2011)
Published in ECS transactions (01.01.2011)
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