High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor
Ma, Z., Mohammadi, S., Bhattacharya, P., Katehi, L.P.B., Alterovitz, S.A., Ponchak, G.E.
Published in Electronics letters (07.06.2001)
Published in Electronics letters (07.06.2001)
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Journal Article
Ku-band (12.6 GHz) SiGe/Si high-power heterojunction bipolar transistors
Ma, Z., Mohammadi, S., Bhattacharya, P., Katehi, L.P.B., Alterovitz, S.A., Ponchak, G.E., Strohm, K.M., Luy, J.-F.
Published in Electronics letters (30.08.2001)
Published in Electronics letters (30.08.2001)
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Journal Article
An 18-GHz 300-mW SiGe power HBT
Zhenqiang Ma, Ningyue Jiang, Guogong Wang, Alterovitz, S.A.
Published in IEEE electron device letters (01.06.2005)
Published in IEEE electron device letters (01.06.2005)
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Journal Article
Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures
Heyd, A.R., Alterovitz, S.A., Croke, E.T., Wang, K.L., Lee, C.H.
Published in Thin solid films (01.12.1995)
Published in Thin solid films (01.12.1995)
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Journal Article
Conference Proceeding
RF properties of epitaxial lift-off HEMT devices
Young, P.G., Alterovitz, S.A., Mena, R.A., Smith, E.D.
Published in I.E.E.E. transactions on electron devices (01.11.1993)
Published in I.E.E.E. transactions on electron devices (01.11.1993)
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Journal Article
Conference Proceeding
RF control of epitaxial lift-off PHEMT's under backside illumination
Young, P.G., Simons, R.N., Alterovitz, S.A., Romanofsky, R.R., Smith, E.D.
Published in IEEE journal of quantum electronics (01.08.1994)
Published in IEEE journal of quantum electronics (01.08.1994)
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Journal Article
Magnetic flux relaxation in YBa2Cu3O7-x thin film : thermal or athermal
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Conference Proceeding
Journal Article
Front surface engineering of high efficiency Si solar cells and Ge TPV cells
Faur, M., Goradia, C., Goradia, M., Bailey, S.G., Flood, D.J., Brinker, D.J., Wheeler, D.R., Alterovitz, S.A., Scheiman, D., Mateescu, G., Faulk, J.
Published in Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 (01.01.1997)
Published in Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 (01.01.1997)
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Conference Proceeding
Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry
Alterovitz, S.A., Sieg, R.M., Yao, H.D., Snyder, P.G., Woollam, J.A., Pamulapati, J., Bhattacharya, P.K., Sekula-Moise, P.A.
Published in Thin solid films (10.12.1991)
Published in Thin solid films (10.12.1991)
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Conference Proceeding