Search Results - "Alt, H Ch" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities

Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities

by Alt, H. Ch, Wagner, H. E., Glacki, A., Frank-Rotsch, Ch, Häublein, V.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.08.2015)

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Journal Article

Splitting of the local mode frequency of substitutional nitrogen in (Ga, In)(As, N) alloys due to symmetry lowering

Splitting of the local mode frequency of substitutional nitrogen in (Ga, In)(As, N) alloys due to symmetry lowering

by Alt, H Ch, Gomeniuk, Y V, Mussler, G
Published in Semiconductor science and technology (01.10.2006)

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Journal Article

Chemical composition of nitrogen–oxygen shallow donor complexes in silicon

Chemical composition of nitrogen–oxygen shallow donor complexes in silicon

by Alt, H.Ch, Wagner, H.E., Ammon, W.v., Bittersberger, F., Huber, A., Koester, L.
Published in Physica. B, Condensed matter (15.12.2007)

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Journal Article

Determination of the residual carbon acceptor concentration in semi-insulating GaAs wafers by IR spectroscopy: accuracy and detection limits

Determination of the residual carbon acceptor concentration in semi-insulating GaAs wafers by IR spectroscopy: accuracy and detection limits

by Alt, H Ch
Published in Semiconductor science and technology (01.02.1988)

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Journal Article

Far-infrared absorption due to shallow acceptors in semi-insulating GaAs in dependence on EL2 bleaching

Far-infrared absorption due to shallow acceptors in semi-insulating GaAs in dependence on EL2 bleaching

by Gomeniuk, Y. V., Alt, H. Ch, Kretzer, U.
Published in Physica Status Solidi (b) (01.11.2003)

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Journal Article

Influence of compensation level on EL2 concentration in semi-insulating gallium arsenide

Influence of compensation level on EL2 concentration in semi-insulating gallium arsenide

by Kretzer, U., Alt, H. Ch
Published in Physica status solidi. C (01.02.2003)

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Journal Article

Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1-x Nx with 0 ≤ x ≤ 0.03

Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1-x Nx with 0 ≤ x ≤ 0.03

by Güngerich, M., Klar, P. J., Heimbrodt, W., Volz, K., Köhler, K., Wagner, J., Polimeni, A., Capizzi, M., Alt, H. Ch, Gomeniuk, Y. V.
Published in Physica status solidi. C (01.03.2006)

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Journal Article

Negative-U properties of off-centre substitutional oxygen in gallium arsenide

Negative-U properties of off-centre substitutional oxygen in gallium arsenide

by Alt, H Ch
Published in Semiconductor science and technology (01.10.1991)

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Journal Article

Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities: Isotopic study of mid-infrared vibrational modes in GaAs

Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities: Isotopic study of mid-infrared vibrational modes in GaAs

by Alt, H. Ch, Wagner, H. E., Glacki, A., Frank-Rotsch, Ch, Häublein, V.
Published in physica status solidi (b) (01.08.2015)

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Journal Article

Analysis of Electrically Active Carbon in Semi-insulating Gallium Arsenide by Infrared Absorption Spectroscopy

Analysis of Electrically Active Carbon in Semi-insulating Gallium Arsenide by Infrared Absorption Spectroscopy

by Alt, H. Ch, Wiedemann, B., Meyer, J. D., Michelmann, R. W., Bethge, K.
Published in Japanese Journal of Applied Physics (01.12.1999)

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Journal Article

Infrared absorption spectroscopy of a carbon-oxygen complex in gallium arsenide

Infrared absorption spectroscopy of a carbon-oxygen complex in gallium arsenide

by Alt, H. Ch, Kersch, A., Wagner, H. E.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.02.2013)

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Journal Article

Symmetry and structure of N–O shallow donor complexes in silicon

Symmetry and structure of N–O shallow donor complexes in silicon

by Alt, H.Ch, Wagner, H.E.
Published in Physica. B, Condensed matter (01.08.2012)

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Journal Article Conference Proceeding

Distribution of the deep acceptor Fe in semi-insulating InP in both its charge states

Distribution of the deep acceptor Fe in semi-insulating InP in both its charge states

by Meier, W, Alt, H Ch, Vetter, T, Volkl, J, Winnacker, A
Published in Semiconductor science and technology (01.04.1991)

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Journal Article

Spark source mass spectrometric calibration of the local vibrational mode absorption of carbon in gallium arsenide on arsenic sublattice sites

Spark source mass spectrometric calibration of the local vibrational mode absorption of carbon in gallium arsenide on arsenic sublattice sites

by WIEDEMANN, B, ALT, H. C, MEYER, J. D, MICHELMANN, R. W, BETHGE, K
Published in Fresenius' journal of analytical chemistry (18.08.1999)

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Journal Article

Comparative mid- and far-infrared spectroscopy of nitrogen–oxygen complexes in silicon

Comparative mid- and far-infrared spectroscopy of nitrogen–oxygen complexes in silicon

by Alt, H.Ch, Wagner, H.E.
Published in Physica. B, Condensed matter (15.12.2009)

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Journal Article

Material Characterization Issues of Nitrogen in Silicon

Material Characterization Issues of Nitrogen in Silicon

by Alt, Hans C.
Published in ECS transactions (28.09.2007)

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Journal Article

Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers

Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers

by Alt, H Ch, Messerer, P, Kirste, L, Kohler, K, Riechert, H
Published in 29th International Conference on the Physics of Semiconductors (27.07.2008)

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Journal Article

Method to determine carbon in silicon by infrared absorption spectroscopy

Method to determine carbon in silicon by infrared absorption spectroscopy

by ALT, H. Ch, GOMENIUK, Y, WIEDEMANN, B, RIEMANN, H
Published in Journal of the Electrochemical Society (01.08.2003)

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Journal Article

Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2

Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2

by Alt, H. Ch, Gomeniuk, Y., Kretzer, U.
Published in Physica status solidi. B. Basic research (01.01.2003)

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Journal Article Conference Proceeding

Analysis of electrically active N–O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

Analysis of electrically active N–O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy

by Alt, H. Ch, Gomeniuk, Y.V., Bittersberger, F., Kempf, A., Zemke, D.
Published in Materials science in semiconductor processing (01.02.2006)

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Journal Article Conference Proceeding