Strain relaxation in AlGaN multilayer structures by inclined dislocations
Follstaedt, D. M., Lee, S. R., Allerman, A. A., Floro, J. A.
Published in Journal of applied physics (15.04.2009)
Published in Journal of applied physics (15.04.2009)
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Journal Article
Strong coupling in the sub-wavelength limit using metamaterial nanocavities
Benz, A, Campione, S, Liu, S, Montaño, I, Klem, J F, Allerman, A, Wendt, J R, Sinclair, M B, Capolino, F, Brener, I
Published in Nature communications (29.11.2013)
Published in Nature communications (29.11.2013)
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Journal Article
Size dictated thermal conductivity of GaN
Beechem, Thomas E., McDonald, Anthony E., Fuller, Elliot J., Talin, A. Alec, Rost, Christina M., Maria, Jon-Paul, Gaskins, John T., Hopkins, Patrick E., Allerman, Andrew A.
Published in Journal of applied physics (07.09.2016)
Published in Journal of applied physics (07.09.2016)
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Journal Article
Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy
Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., Abate, V. M.
Published in Journal of applied physics (14.10.2019)
Published in Journal of applied physics (14.10.2019)
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Journal Article
X-ray topography characterization of gallium nitride substrates for power device development
Raghothamachar, Balaji, Liu, Yafei, Peng, Hongyu, Ailihumaer, Tuerxun, Dudley, Michael, Shahedipour-Sandvik, F. Shadi, Jones, Kenneth A., Armstrong, Andrew, Allerman, Andrew A., Han, Jung, Fu, Houqiang, Fu, Kai, Zhao, Yuji
Published in Journal of crystal growth (15.08.2020)
Published in Journal of crystal growth (15.08.2020)
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Journal Article
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
Liu, Yafei, Raghothamachar, Balaji, Peng, Hongyu, Ailihumaer, Tuerxun, Dudley, Michael, Collazo, Ramon, Tweedie, James, Sitar, Zlatko, Shadi Shahedipour-Sandvik, F., Jones, Kenneth A., Armstrong, Andrew, Allerman, Andrew A., Grabianska, Karolina, Kucharski, Robert, Bockowski, Michal
Published in Journal of crystal growth (01.12.2020)
Published in Journal of crystal growth (01.12.2020)
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Journal Article
Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes
King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., Wampler, W. R., Kizilyalli, I. C., Bour, D. P., Aktas, O., Nie, H., Disney, D., Wierer, J., Allerman, A. A., Moseley, M. W., Leonard, F., Talin, A. A., Kaplar, R. J.
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Journal Article
Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
Collins, K. C., Armstrong, A. M., Allerman, A. A., Vizkelethy, G., Van Deusen, S. B., Léonard, F., Talin, A. A.
Published in Journal of applied physics (21.12.2017)
Published in Journal of applied physics (21.12.2017)
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Journal Article
Radiation Response of AlGaN-Channel HEMTs
Martinez, M. J., King, M. P., Baca, A. G., Allerman, A. A., Armstrong, A. A., Klein, B. A., Douglas, E. A., Kaplar, R. J., Swanson, S. E.
Published in IEEE transactions on nuclear science (01.01.2019)
Published in IEEE transactions on nuclear science (01.01.2019)
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Journal Article
High voltage and high current density vertical GaN power diodes
Armstrong, A.M, Allerman, A.A, Fischer, A.J, King, M.P, van Heukelom, M.S, Moseley, M.W, Kaplar, R.J, Wierer, J.J, Crawford, M.H, Dickerson, J.R
Published in Electronics letters (23.06.2016)
Published in Electronics letters (23.06.2016)
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Journal Article
Planar Ohmic Contacts to Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors
Klein, B. A., Baca, A. G., Armstrong, A. M., Allerman, A. A., Sanchez, C. A., Douglas, E. A., Crawford, M. H., Miller, M. A., Kotula, P. G., Fortune, T. R., Abate, V. M.
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
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Journal Article
Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.
Published in IEEE transactions on semiconductor manufacturing (01.11.2019)
Published in IEEE transactions on semiconductor manufacturing (01.11.2019)
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Journal Article
Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N
Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J.
Published in Journal of applied physics (14.05.2015)
Published in Journal of applied physics (14.05.2015)
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Journal Article
High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study
Reza, Shahed, Klein, Brianna A., Baca, Albert. G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica. A., Kaplar, Robert J.
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Ultra-wide band gap AlGaN polarization-doped field effect transistor
Armstrong, Andrew M., Klein, Brianna A., Colon, Albert, Allerman, Andrew A., Douglas, Erica A., Baca, Albert G., Fortune, Torben R., Abate, Vincent M., Bajaj, Sanyam, Rajan, Siddharth
Published in Japanese Journal of Applied Physics (01.07.2018)
Published in Japanese Journal of Applied Physics (01.07.2018)
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Journal Article
Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Cross, K. C., Glaser, C. E., Abate, V. M.
Published in Journal of electronic materials (01.05.2019)
Published in Journal of electronic materials (01.05.2019)
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Journal Article
Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors
Carey, Patrick H., Pearton, Stephen J., Ren, Fan, Baca, Albert G., Klein, Brianna A., Allerman, Andrew A., Armstrong, Andrew M., Douglas, Erica A., Kaplar, Robert J., Kotula, Paul G.
Published in IEEE journal of the Electron Devices Society (2019)
Published in IEEE journal of the Electron Devices Society (2019)
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Journal Article
Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices
Allerman, A.A., Crawford, M.H., Miller, M.A., Lee, S.R.
Published in Journal of crystal growth (01.03.2010)
Published in Journal of crystal growth (01.03.2010)
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Journal Article