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Influence of Design and Process Parameters of 32-nm Advanced-Process High-k p-MOSFETs on Negative-Bias Temperature Instability and Study of Defects

by Alimin, A. F. Muhammad, Radzi, A. A. Mohd, Sazali, N. A. F., Hatta, S. F. Wan Muhamad, Soin, N., Hussin, H.
Published in Journal of electronic materials (01.10.2017)

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Influence of Design and Process Parameters of 32-nm Advanced-Process High-kp-MOSFETs on Negative-Bias Temperature Instability and Study of Defects

by Alimin, A. F. Muhammad, Radzi, A. A. Mohd, Sazali, N. A. F., Hatta, S. F. Wan Muhamad, Soin, N., Hussin, H.
Published in Journal of electronic materials (2017)

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Effect of gate length on Negative Bias Temperature Instability of 32nm advanced technology HKMG PMOSFET

by Muhammad Alimin, A. F., Wan Muhamad Hatta, S. F., Soin, N.
Published in 2016 IEEE International Conference on Semiconductor Electronics (ICSE) (01.08.2016)

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Conference Proceeding

Influence of Design and Process Parameters of 32-nm Advanced-Process High-k p-MOSFETs on Negative-Bias Temperature Instability and Study of Defects

Influence of Design and Process Parameters of 32-nm Advanced-Process High-kp-MOSFETs on Negative-Bias Temperature Instability and Study of Defects

Effect of gate length on Negative Bias Temperature Instability of 32nm advanced technology HKMG PMOSFET

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