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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress
Minetto, Andrea, Deutschmann, Bernd, Modolo, Nicola, Nardo, Arianna, Meneghini, Matteo, Zanoni, Enrico, Sayadi, Luca, Prechtl, Gerhard, Sicre, Sebastien, Haberlen, Oliver
Published in IEEE transactions on electron devices (01.11.2020)
Published in IEEE transactions on electron devices (01.11.2020)
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Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors
Byung Hwan Chu, Kang, B.S., Chang, C.Y., Ren, F., Goh, A., Sciullo, A., Wu, W., Lin, J., Gila, B.P., Pearton, S.J., Johnson, J.W., Piner, E.L., Linthicum, K.J.
Published in IEEE sensors journal (01.01.2010)
Published in IEEE sensors journal (01.01.2010)
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(Invited) Simulation of the Effects of As-Grown Defects on GaN-Based Power HEMTs
Mukherjee, Shrijit, Patrick, Erin, Law, Mark E, Ren, Fan, Pearton, Stephen J.
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
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Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations
Kaur, Harpreet, Sharma, Rajesh, Laurent, T., Torres, J., Nouvel, P., Palermo, C., Varani, L., Cordier, Y., Chmielowska, M., Faurie, J.-P., Beaumont, B.
Published in Applied physics. A, Materials science & processing (01.02.2022)
Published in Applied physics. A, Materials science & processing (01.02.2022)
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