Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors
Jayawardhena, I. U., Ramamurthy, R. P., Morisette, D., Ahyi, A. C., Thorpe, R., Kuroda, M. A., Feldman, L. C., Dhar, S.
Published in Journal of applied physics (21.02.2021)
Published in Journal of applied physics (21.02.2021)
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Atomic state and characterization of nitrogen at the SiC/SiO2 interface
Xu, Y., Zhu, X., Lee, H. D., Xu, C., Shubeita, S. M., Ahyi, A. C., Sharma, Y., Williams, J. R., Lu, W., Ceesay, S., Tuttle, B. R., Wan, A., Pantelides, S. T., Gustafsson, T., Garfunkel, E. L., Feldman, L. C.
Published in Journal of applied physics (21.01.2014)
Published in Journal of applied physics (21.01.2014)
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Journal Article
Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence
Jiao, C., Ahyi, A. C., Xu, C., Morisette, D., Feldman, L. C., Dhar, S.
Published in Journal of applied physics (21.04.2016)
Published in Journal of applied physics (21.04.2016)
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High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., Garfunkel, E. L., Dhar, S., Feldman, L. C., Williams, J. R.
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen
Wang, Sanwu, Dhar, S, Wang, Shu-Rui, Ahyi, A C, Franceschetti, A, Williams, J R, Feldman, L C, Pantelides, Sokrates T
Published in Physical review letters (12.01.2007)
Published in Physical review letters (12.01.2007)
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Journal Article
Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides
Jiao, C., Ahyi, A. C., Dhar, S., Morisette, D., Myers-Ward, R.
Published in Journal of electronic materials (01.04.2017)
Published in Journal of electronic materials (01.04.2017)
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Journal Article
Phosphorous passivation of the SiO2/4H-SiC interface
SHARMA, Y. K, AHYI, A. C, ISSACS-SMITH, T, SHEN, X, PANTELIDES, S. T, ZHU, X, FELDMAN, L. C, ROZEN, J, WILLIAMS, J. R
Published in Solid-state electronics (01.02.2012)
Published in Solid-state electronics (01.02.2012)
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Journal Article
Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface
Basile, A. F., Ahyi, A. C., Feldman, L. C., Williams, J. R., Mooney, P. M.
Published in Journal of applied physics (21.01.2014)
Published in Journal of applied physics (21.01.2014)
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Journal Article
Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface
Xu, Y., Xu, C., Liu, G., Lee, H. D., Shubeita, S. M., Jiao, C., Modic, A., Ahyi, A. C., Sharma, Y., Wan, A., Williams, J. R., Gustafsson, T., Dhar, S., Garfunkel, E. L., Feldman, L. C.
Published in Journal of applied physics (21.12.2015)
Published in Journal of applied physics (21.12.2015)
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Journal Article
Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces
Modic, A., Sharma, Y.K., Xu, Y., Liu, G., Ahyi, A.C., Williams, J.R., Feldman, L.C., Dhar, S.
Published in Journal of electronic materials (01.04.2014)
Published in Journal of electronic materials (01.04.2014)
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Journal Article
Conference Proceeding
Spectroscopic photo I–V diagnostics of nitride-based high electron mobility transistor structures on Si wafers
Tong, F, Yapabandara, K, Yang, C.-W, Khanal, M, Jiao, C, Goforth, M, Ozden, B, Ahyi, A, Hamilton, M, Niu, G, Ewoldt, D.A, Chung, G, Park, M
Published in Electronics letters (21.11.2013)
Published in Electronics letters (21.11.2013)
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Journal Article
Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing
Oder, T. N., Sung, T. L., Barlow, M., Williams, J. R., Ahyi, A. C., Isaacs-Smith, T.
Published in Journal of electronic materials (01.06.2009)
Published in Journal of electronic materials (01.06.2009)
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MOS Characteristics of C-Face 4H-SiC
Chen, Z., Ahyi, A.C., Zhu, X., Li, M., Isaacs-Smith, T., Williams, J.R., Feldman, L.C.
Published in Journal of electronic materials (01.05.2010)
Published in Journal of electronic materials (01.05.2010)
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Journal Article
Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC
Li, M., Ahyi, A. C., Zhu, X., Chen, Z., Isaacs-Smith, T., Williams, J. R., Crofton, J.
Published in Journal of electronic materials (01.05.2010)
Published in Journal of electronic materials (01.05.2010)
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Re-radiation of acoustic waves from the A0 wave on a submerged elastic shell
Ahyi, A C, Cao, Hui, Raju, P K, Uberall, Herbert
Published in The Journal of the Acoustical Society of America (01.07.2005)
Published in The Journal of the Acoustical Society of America (01.07.2005)
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Journal Article
On the electro-optic measurements in organic single-crystal films
Bhowmik, Achintya K, Tan, Shida, Ahyi, A Claude
Published in Journal of physics. D, Applied physics (07.12.2004)
Published in Journal of physics. D, Applied physics (07.12.2004)
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Waves on fluid-loaded shells and their resonance frequency spectrum
Bao, X.L., Überall, H., Raju, P.K., Ahyi, A.C., Bjørnø, I.K., Bjørnø, L.
Published in Journal of sound and vibration (01.10.2005)
Published in Journal of sound and vibration (01.10.2005)
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Journal Article
Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors
Taillon, Joshua A., Hyuk Yang, Joon, Ahyi, Claude A., Rozen, John, Williams, John R., Feldman, Leonard C., Zheleva, Tsvetanka S., Lelis, Aivars J., Salamanca-Riba, Lourdes G.
Published in Journal of applied physics (28.01.2013)
Published in Journal of applied physics (28.01.2013)
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Journal Article
4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping
Zheng, Yongju, Isaacs-Smith, T., Ahyi, A. C., Dhar, S.
Published in IEEE electron device letters (01.10.2017)
Published in IEEE electron device letters (01.10.2017)
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