A 1.1 GHz 12 μA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications
YIH WANG, HONG JO AHN, LIN, Jie-Feng, NG, Yong-Gee, POST, Ian, LIQIONG WEI, YING ZHANG, ZHANG, Kevin, BOHR, Mark, BHATTACHARYA, Uddalak, ZHANPING CHEN, COAN, Tom, HAMZAOGLU, Fatih, HAFEZ, Walid M, JAN, Chia-Hong, KOLAR, Pramod, KULKARNI, Sarvesh H
Published in IEEE journal of solid-state circuits (2008)
Published in IEEE journal of solid-state circuits (2008)
Get full text
Conference Proceeding
Journal Article
A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology
Hamzaoglu, F., Zhang, K., Yih Wang, Ahn, H.J., Bhattacharya, U., Zhanping Chen, Yong-Gee Ng, Pavlov, A., Smits, K., Bohr, M.
Published in IEEE journal of solid-state circuits (01.01.2009)
Published in IEEE journal of solid-state circuits (01.01.2009)
Get full text
Journal Article
Conference Proceeding
GHz programmable dual-modulus prescaler for multi-standard wireless applications
Hong Jo Ahn, Ismail, M.
Published in 2002 IEEE International Symposium on Circuits and Systems (ISCAS) (2002)
Published in 2002 IEEE International Symposium on Circuits and Systems (ISCAS) (2002)
Get full text
Conference Proceeding
The design of 433 MHz class AB CMOS power amplifier
Seoung-Jae Yoo, Hong Jo Ahn, Hella, M.M., Ismail, M.
Published in 2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390) (2000)
Published in 2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390) (2000)
Get full text
Conference Proceeding
A 1.1 GHz 12 \muA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications
Yih Wang, Hong Jo Ahn, Bhattacharya, U., Zhanping Chen, Coan, T., Hamzaoglu, F., Hafez, W.M., Chia-Hong Jan, Kolar, P., Kulkarni, S.H., Jie-Feng Lin, Yong-Gee Ng, Post, I., Liqiong Wei, Ying Zhang, Zhang, K., Bohr, M.
Published in IEEE journal of solid-state circuits (01.01.2008)
Published in IEEE journal of solid-state circuits (01.01.2008)
Get full text
Journal Article
A 1.1 GHz 12 [mu]A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications
Wang, Yih, Ahn, Hong Jo, Bhattacharya, U, Chen, Zhanping, Coan, T, Hamzaoglu, F, Hafez, W M, Jan, Chia-Hong, Kolar, P, Kulkarni, S H, Lin, Jie-Feng, Ng, Yong-Gee, Post, I, Wei, Liqiong, Zhang, Ying, Zhang, K, Bohr, M
Published in IEEE journal of solid-state circuits (01.01.2008)
Published in IEEE journal of solid-state circuits (01.01.2008)
Get full text
Journal Article