Responsivity Enhancement of Wafer‐Bonded In0.53Ga0.47As Photo‐Field‐Effect Transistor on Si Substrate via Equivalent Oxide Thickness Scaling
Jeon, Sung‐Han, Ahn, Dae‐Hwan, Ko, Kyul, Choi, Won Jun, Song, Jin‐Dong, Choi, Woo‐Young, Han, Jae‐Hoon
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
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Journal Article
Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties
Ko, Kyul, Ahn, Dae-Hwan, Suh, Hoyoung, Ju, Byeong-Kwon, Han, Jae-Hoon
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm
Park, Eunsung, Ha, Won-Yong, Park, Hyo-Sung, Eom, Doyoon, Choi, Hyun-Seung, Ahn, Dae-Hwan, Choi, Woo-Young, Lee, Myung-Jae
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
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Journal Article
Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode
Park, Eunsung, Eom, Doyoon, Yu, Myeong-Hun, Moon, Yun-Mi, Ahn, Dae-Hwan, Ahn, Jongtae, Hwang, Do Kyung, Choi, Woo-Young, Lee, Myung-Jae
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
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Journal Article
Importance of van der Waals Descriptions on Accurate Isomerization Energy Calculations of Thiourea Compounds: LCgau-BOP+LRD Method
Ahn, Dae-Hwan, Sato, Takeshi, Song, Jong-Won, Hirao, Kimihiko
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (15.08.2019)
Published in The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory (15.08.2019)
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Journal Article
TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications
Chen, Simin, Ahn, Dae-Hwan, An, Seong Ui, Noh, Tae Hyeon, Kim, Younghyun
Published in Journal of the Korean Physical Society (01.07.2024)
Published in Journal of the Korean Physical Society (01.07.2024)
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Journal Article
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate
Kim, Tae Soo, Jeon, Sung‐Han, Ko, Kyeol, Ahn, Dae‐Hwan, Han, Jae‐Hoon, Choi, Won Jun, Yu, Ki Jun
Published in Advanced electronic materials (01.11.2023)
Published in Advanced electronic materials (01.11.2023)
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Journal Article
GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer
Kim, Yeonhwa, Madarang, May Angelu, Ju, Eunkyo, Laryn, Tsimafei, Chu, Rafael Jumar, Kim, Tae Soo, Ahn, Dae-Hwan, Kim, Taehee, Lee, In-Hwan, Choi, Won Jun, Jung, Daehwan
Published in Energies (Basel) (01.01.2023)
Published in Energies (Basel) (01.01.2023)
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Journal Article
Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nm
Park, Eunsung, Ha, Won-Yong, Eom, Doyoon, Ahn, Dae-Hwan, An, Hyuk, Yi, Suhyun, Kim, Kyung-Do, Kim, Jongchae, Choi, Woo-Young, Lee, Myung-Jae
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth
Chu, Rafael Jumar, Laryn, Tsimafei, Ahn, Dae-Hwan, Han, Jae-Hoon, Kim, HoSung, Choi, Won Jun, Jung, Daehwan
Published in Optics express (15.01.2024)
Published in Optics express (15.01.2024)
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Journal Article
Self-Powered Visible–Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes
Ahn, Jongtae, Kang, Ji-Hoon, Kyhm, Jihoon, Choi, Hyun Tae, Kim, Minju, Ahn, Dae-Hwan, Kim, Dae-Yeon, Ahn, Il-Ho, Park, Jong Bae, Park, Soohyung, Yi, Yeonjin, Song, Jin Dong, Park, Min-Chul, Im, Seongil, Hwang, Do Kyung
Published in ACS applied materials & interfaces (04.03.2020)
Published in ACS applied materials & interfaces (04.03.2020)
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Journal Article
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs
An, Seong Ui, Ahn, Dae-Hwan, Ju, Gijun, Chen, Simin, Seop Ji, Yo, Han, Jae-Hoon, Kim, Jaekyun, Kim, Younghyun
Published in IEEE transactions on electron devices (01.09.2024)
Published in IEEE transactions on electron devices (01.09.2024)
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Journal Article
Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing
Ahn, Dae-Hwan, Hu, Suman, Ko, Kyeol, Park, Donghee, Suh, Hoyoung, Kim, Gyu-Tae, Han, Jae-Hoon, Song, Jin-Dong, Jeong, YeonJoo
Published in ACS applied materials & interfaces (01.06.2022)
Published in ACS applied materials & interfaces (01.06.2022)
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Journal Article
Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission
Kim, Yeonhwa, Chu, Rafael Jumar, Ryu, Geunhwan, Woo, Seungwan, Lung, Quang Nhat Dang, Ahn, Dae-Hwan, Han, Jae-Hoon, Choi, Won Jun, Jung, Daehwan
Published in ACS applied materials & interfaces (05.10.2022)
Published in ACS applied materials & interfaces (05.10.2022)
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Journal Article
First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s
Noh, Tae Hyeon, Chen, Simin, Kim, Hyo-Bae, Jin, Taewon, Park, Seoung Min, An, Seong Ui, Sun, Xinkai, Kim, Jaekyun, Han, Jae-Hoon, Ahn, Ji-Hoon, Ahn, Dae-Hwan, Kim, Younghyun
Published in Nanoscale (12.09.2024)
Published in Nanoscale (12.09.2024)
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Journal Article