Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates
Thomas, S.G., Johnson, E.S., Tracy, C., Maniar, P., Xiuling Li, Roof, B., Hartmann, Q., Ahmari, D.A.
Published in IEEE electron device letters (01.07.2005)
Published in IEEE electron device letters (01.07.2005)
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Journal Article
High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
Fresina, M.T., Ahmari, D.A., Mares, P.J., Hartmann, Q.J., Feng, M., Stillman, G.E.
Published in IEEE electron device letters (01.12.1995)
Published in IEEE electron device letters (01.12.1995)
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Journal Article
High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base
Ahmari, D.A., Fresina, M.T., Hartmann, Q.J., Barlage, D.W., Mares, P.J., Feng, M., Stillman, G.E.
Published in IEEE electron device letters (01.05.1996)
Published in IEEE electron device letters (01.05.1996)
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Journal Article
InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer
Ahmari, D.A., Fresina, M.T., Hartmann, Q.J., Barlage, D.W., Feng, M., Stillman, G.E.
Published in IEEE electron device letters (01.11.1997)
Published in IEEE electron device letters (01.11.1997)
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Journal Article
Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD
Hartmann, Q.J., Fresina, M.T., Ahmari, D.A., Stockman, S.A., Baker, J.E., Barlage, D., Hwangbo, H., Yung, A., Feng, M., Stillman, G.E.
Published in Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (1997)
Published in Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (1997)
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Conference Proceeding
Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT
Barlage, D.W., Heins, M.S., Mu, J.H., Fresina, M.T., Ahmari, D.A., Hartman, Q.J., Stillman, G.E., Feng, M.
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
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Conference Proceeding
Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD
Yang, Q., Hartmann, Q.J., Curtis, A.P., Lin, C., Ahmari, D.A., Scott, D., Kuo, H.C., Chen, H., Stillman, G.E.
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
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Conference Proceeding
PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication
Ahmari, D.A., Hattendorf, M.L., Lemmerhirt, D.F., Yang, Q., Hartmann, Q.J., Stillman, G.E.
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
Published in Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors (1997)
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Conference Proceeding
Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide
Heins, M.S., Barlage, D.W., Fresina, M.T., Ahmari, D.A., Hartmann, Q.J., Stillman, G.E., Feng, M.
Published in 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers (1997)
Published in 1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers (1997)
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Conference Proceeding
Silicon doping of InP, GaAs, In/sub 0.53/Ga/sub 0.47/As and In/sub 0.49/Ga/sub 0.51/P grown by gas source and metalorganic molecular beam epitaxy using a SiBr/sub 4/ vapor source
Jackson, S.L., Thomas, S., Fresina, M.T., Ahmari, D.A., Baker, J.E., Stillman, G.E.
Published in Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) (1994)
Published in Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) (1994)
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Conference Proceeding
Growth and characterization of high-speed InP/InGaAs bipolar transistors using n/sup +/-InP contacting layers
Thomas, S., Martino, C.A., Fresina, M.T., Ahmari, D.A., Barlage, D.W., Chang, W.-H., Feng, M., Stillman, G.E.
Published in Proceedings of 8th International Conference on Indium Phosphide and Related Materials (1996)
Published in Proceedings of 8th International Conference on Indium Phosphide and Related Materials (1996)
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Conference Proceeding
Carbon-doped HBTs for OEICs
Stillman, G.E., Feng, M., Fresina, M.A., Hartmann, Q.J., Ahmari, D.A., Mares, P.J., Thomas, S., Stockman, S.A., Jackson, S.L.
Published in Proceedings of 4th International Conference on Solid-State and IC Technology (1995)
Published in Proceedings of 4th International Conference on Solid-State and IC Technology (1995)
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Conference Proceeding
Effect of collector design on the d.c. characteristics of [formula omitted] heterojunction bipolar transistors
Hartmann, Q.J., Fresina, M.T., Ahmari, D.A., Stillman, G.E.
Published in Solid State Electronics (01.12.1995)
Published in Solid State Electronics (01.12.1995)
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Book Review
Journal Article
A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology
Sokolich, M., Docter, D.P., Brown, Y.K., Kramer, A.R., Jensen, J.F., Stanchina, W.E., Thomas, S., Fields, C.H., Ahmari, D.A., Lui, M., Martinez, R., Duvall, J.
Published in GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) (1998)
Published in GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) (1998)
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Conference Proceeding
InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication
Fresina, M.T., Hartmann, Q.J., Thomas, S., Ahmari, D.A., Caruth, D., Feng, M., Stillman, G.E.
Published in International Electron Devices Meeting. Technical Digest (1996)
Published in International Electron Devices Meeting. Technical Digest (1996)
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Conference Proceeding