Characterization of Single-Event Transients in Schmitt Trigger Inverter Chains Operating at Subthreshold Voltages
Gadlage, Matthew J., Ahlbin, Jonathan R., Gadfort, Peter, Roach, Austin H., Stansberry, Scott
Published in IEEE transactions on nuclear science (01.01.2017)
Published in IEEE transactions on nuclear science (01.01.2017)
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Journal Article
Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes
Gadlage, M J, Ahlbin, J R, Narasimham, B, Bhuva, B L, Massengill, L W, Reed, R A, Schrimpf, R D, Vizkelethy, G
Published in IEEE transactions on nuclear science (01.12.2010)
Published in IEEE transactions on nuclear science (01.12.2010)
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Journal Article
Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS
Atkinson, N. M., Ahlbin, J. R., Witulski, A. F., Gaspard, N. J., Holman, W. T., Bhuva, B. L., Zhang, E. X., Li Chen, Massengill, L. W.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS
Jagannathan, S, Gadlage, M J, Bhuva, B L, Schrimpf, R D, Narasimham, B, Chetia, J, Ahlbin, J R, Massengill, L W
Published in IEEE transactions on nuclear science (01.12.2010)
Published in IEEE transactions on nuclear science (01.12.2010)
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Journal Article
Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS
Gaspard, N. J., Witulski, A. F., Atkinson, N. M., Ahlbin, J. R., Holman, W. T., Bhuva, B. L., Loveless, T. D., Massengill, L. W.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node
Artola, L, Hubert, G, Warren, K M, Gaillardin, M, Schrimpf, R D, Reed, R A, Weller, R A, Ahlbin, J R, Paillet, P, Raine, M, Girard, S, Duzellier, S, Massengill, L W, Bezerra, F
Published in IEEE transactions on nuclear science (01.06.2011)
Published in IEEE transactions on nuclear science (01.06.2011)
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Journal Article
Layout Technique for Single-Event Transient Mitigation via Pulse Quenching
Atkinson, N M, Witulski, A F, Holman, W T, Ahlbin, J R, Bhuva, B L, Massengill, L W
Published in IEEE transactions on nuclear science (01.06.2011)
Published in IEEE transactions on nuclear science (01.06.2011)
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Journal Article
SET Characterization in Logic Circuits Fabricated in a 3DIC Technology
Gouker, P. M., Tyrrell, B., Renzi, M., Chenson Chen, Wyatt, P., Ahlbin, J. R., Weeden-Wright, S., Atkinson, N. M., Gaspard, N. J., Bhuva, B. L., Massengill, L. W., Enxia Zhang, Schrimpf, R., Weller, R. A., King, M. P., Gadlage, M. J.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Radiation Effects in 3D Integrated SOI SRAM Circuits
Gouker, P. M., Tyrrell, B., D'Onofrio, R., Wyatt, P., Soares, T., Weilin Hu, Chenson Chen, Schwank, J. R., Shaneyfelt, M. R., Blackmore, E. W., Delikat, K., Nelson, M., McMarr, P., Hughes, H., Ahlbin, J. R., Weeden-Wright, S., Schrimpf, R.
Published in IEEE transactions on nuclear science (01.12.2011)
Published in IEEE transactions on nuclear science (01.12.2011)
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Journal Article
Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology
Gadlage, M J, Ahlbin, J R, Bhuva, B L, Hooten, N C, Dodds, N A, Reed, R A, Massengill, L W, Schrimpf, R D, Vizkelethy, G
Published in IEEE transactions on nuclear science (01.06.2011)
Published in IEEE transactions on nuclear science (01.06.2011)
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Journal Article
Application of a novel test system to characterize single-event effects at cryogenic temperatures
Ramachandran, Vishwanath, Gadlage, Matthew J., Ahlbin, Jonathan R., Narasimham, Balaji, Alles, Michael L., Reed, Robert A., Bhuva, Bharat L., Massengill, Lloyd W., Black, Jeffrey D., Foster, Christopher N.
Published in Solid-state electronics (01.10.2010)
Published in Solid-state electronics (01.10.2010)
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Journal Article
Cross-Layer Modeling and Simulation of Circuit Reliability
Yu Cao, Velamala, Jyothi, Sutaria, Ketul, Chen, Mike Shuo-Wei, Ahlbin, Jonathan, Sanchez Esqueda, Ivan, Bajura, Michael, Fritze, Michael
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.01.2014)
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01.01.2014)
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Journal Article
Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits
Ahlbin, J.R., Massengill, L.W., Bhuva, B.L., Narasimham, B., Gadlage, M.J., Eaton, P.H.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Design Techniques to Reduce SET Pulse Widths in Deep-Submicron Combinational Logic
Amusan, O.A., Massengill, L.W., Bhuva, B.L., DasGupta, S., Witulski, A.F., Ahlbin, J.R.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies
Gadlage, M.J., Ahlbin, J.R., Ramachandran, V., Gouker, P., Dinkins, C.A., Bhuva, B.L., Narasimham, B., Schrimpf, R.D., McCurdy, M.W., Alles, M.L., Reed, R.A., Mendenhall, M.H., Massengill, L.W., Shuler, R.L., McMorrow, D.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power
Casey, M.C., Armstrong, S.E., Arora, R., King, M.P., Ahlbin, J.R., Francis, S.A., Bhuva, B.L., McMorrow, D., Hughes, H.L., McMarr, P.J., Melinger, J.S., Massengill, L.W.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths
Ahlbin, J. R., Gadlage, M. J., Atkinson, N. M., Narasimham, B., Bhuva, B. L., Witulski, A. F., Holman, W. T., Eaton, P. H., Massengill, L. W.
Published in IEEE transactions on device and materials reliability (01.09.2011)
Published in IEEE transactions on device and materials reliability (01.09.2011)
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Magazine Article
Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures
Gadlage, M J, Ahlbin, J R, Narasimham, B, Bhuva, B L, Massengill, L W, Schrimpf, R D
Published in IEEE transactions on device and materials reliability (01.03.2011)
Published in IEEE transactions on device and materials reliability (01.03.2011)
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Magazine Article