Analysis of the SiO 2 /Si 3 N 4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
Mattalah, M., Soltani, A., Gerbedoen, J.‐C., Ahaitouf, Az, Defrance, N., Cordier, Y., De Jaeger, J.‐C.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
Get full text
Journal Article
Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
Mattalah, M., Soltani, A., Gerbedoen, J.-C., Ahaitouf, Az, Defrance, N., Cordier, Y., De Jaeger, J.-C.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
Get full text
Journal Article