Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation
Kupke, Steve, Knebel, Steve, Ocker, Johannes, Slesazeck, Stefan, Agaiby, Rimoon, Trentzsch, Martin, Mikolajick, Thomas
Published in IEEE electron device letters (01.05.2015)
Published in IEEE electron device letters (01.05.2015)
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Journal Article
Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability
Knebel, S., Kupke, S., Schroeder, U., Slesazeck, S., Mikolajick, T., Agaiby, R., Trentzsch, M.
Published in IEEE transactions on electron devices (01.07.2013)
Published in IEEE transactions on electron devices (01.07.2013)
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Journal Article
The Degradation Process of High- k~/ Gate-Stacks: A Combined Experimental and First Principles Investigation
Nadimi, Ebrahim, Roll, Guntrade, Kupke, Steve, Öttking, Rolf, Plänitz, Philipp, Radehaus, Christian, Schreiber, Michael, Agaiby, Rimoon, Trentzsch, Martin, Knebel, Steve, Slesazeck, Stefan, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Journal Article
First Insight Into the Lifetime Acceleration Model of High-k ZrO2/SiO2/ZrO2 Stacks for Advanced DRAM Technology Nodes
AGAIBY, Rimoon, HOFMANN, Peter, DAYU ZHOU, KERBER, Martin, HEITMANN, Johannes, SCHROEDER, Uwe, ERBEN, Eike, OBERBECK, Lars
Published in IEEE electron device letters (01.04.2009)
Published in IEEE electron device letters (01.04.2009)
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Journal Article
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
Dalapati, G.K., Chattopadhyay, S., Kwa, K.S.K., Olsen, S.H., Tsang, Y.L., Agaiby, R., O'Neill, A.G., Dobrosz, P., Bull, S.J.
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
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Journal Article
Quantifying self-heating effects with scaling in globally strained Si MOSFETs
Agaiby, Rimoon, Yang, Yang, Olsen, Sarah H., O’Neill, Anthony G., Eneman, Geert, Verheyen, Peter, Loo, Roger, Claeys, Cor
Published in Solid-state electronics (01.11.2007)
Published in Solid-state electronics (01.11.2007)
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Journal Article
Conference Proceeding
Detailed Correlation of Electrical and Breakdown Characteristics to the Structural Properties of ALD Grown HfO 2 - and ZrO 2 -based Capacitor Dielectrics
Schroeder, Uwe, Weinreich, Wenke, Erben, Elke, Mueller, Johannes, Wilde, Lutz, Heitmann, Johannes, Agaiby, Rimoon, Zhou, Dayu, Jegert, Gunter, Kersch, Alfred
Published in ECS transactions (25.09.2009)
Published in ECS transactions (25.09.2009)
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Journal Article
Insight Into the Aggravated Lifetime Reliability in Advanced MOSFETs With Strained-Si Channels on SiGe Strain-Relaxed Buffers Due to Self-Heating
Agaiby, Rimoon, O'Neill, Anthony G., Olsen, Sarah H., Eneman, Geert, Verheyen, Peter, Loo, Roger, Claeys, Cor
Published in IEEE transactions on electron devices (01.06.2008)
Published in IEEE transactions on electron devices (01.06.2008)
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Journal Article
Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs
Olsen, S.H., Escobedo-Cousin, E., Varzgar, J.B., Agaiby, R., Seger, J., Dobrosz, P., Chattopadhyay, S., Bull, S.J., O'Neill, A.G., Hellstrom, P.-E., Edholm, J., Ostling, M., Lyutovich, K.L., Oehme, M., Kasper, E.
Published in IEEE transactions on electron devices (01.09.2006)
Published in IEEE transactions on electron devices (01.09.2006)
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Journal Article
Quantifying Self-Heating Effects in Strained Si MOSFETs with Scaling
Agaiby, R., O'Neill, A., Olsen, S., Eneman, G., Verheyen, P., Loo, R., Claeys, C.
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
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Conference Proceeding
Analysis of Gate Leakage in Strained Si MOSFETs
Yan, Liang, Olsen, Sarah H., Kanoun, Mehdi, Al-Araimi, Mohammed, Agaiby, Rimoon, Dalapati, Goutam, O'Neill, Anthony
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Analysis of Gate Leakage in Strained Si MOSFETs
Yan, Liang, Olsen, Sarah H., Kanoun, Mehdi, Al-Araimi, Mohammed, Agaiby, Rimoon, Dalapati, Goutam, O'Neill, Anthony
Published in Meeting abstracts (Electrochemical Society) (30.06.2006)
Published in Meeting abstracts (Electrochemical Society) (30.06.2006)
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Journal Article
Reliability Comparison of ZrO 2 -Based DRAM High-k Dielectrics Under DC and AC Stress
Knebel, Steve, Zhou, Dayu, Schroeder, Uwe, Slesazeck, Stefan, Pesic, Milan, Agaiby, Rimoon, Heitmann, Johannes, Mikolajick, Thomas
Published in IEEE transactions on device and materials reliability (01.06.2017)
Published in IEEE transactions on device and materials reliability (01.06.2017)
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Magazine Article
Reliability Comparison of ZrO2-Based DRAM High-k Dielectrics Under DC and AC Stress
Knebel, Steve, Dayu Zhou, Schroeder, Uwe, Slesazeck, Stefan, Pesic, Milan, Agaiby, Rimoon, Heitmann, Johannes, Mikolajick, Thomas
Published in IEEE transactions on device and materials reliability (01.06.2017)
Published in IEEE transactions on device and materials reliability (01.06.2017)
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Magazine Article