Dual- k Spacer Device Architecture for the Improvement of Performance of Silicon n-Channel Tunnel FETs
Virani, H G, Adari, R B R, Kottantharayil, A
Published in IEEE transactions on electron devices (01.10.2010)
Published in IEEE transactions on electron devices (01.10.2010)
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Journal Article
Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
Kamath, A., Patil, T., Adari, R., Bhattacharya, I., Ganguly, S., Aldhaheri, R. W., Hussain, M. A., Saha, D.
Published in IEEE electron device letters (01.12.2012)
Published in IEEE electron device letters (01.12.2012)
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Journal Article
Room temperature ferromagnetism in thermally diffused Cr in GaN
Suggisetti, P., Banerjee, D., Adari, R., Pande, N., Patil, T., Ganguly, S., Saha, D.
Published in AIP advances (01.03.2013)
Published in AIP advances (01.03.2013)
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Journal Article
Characteristics of ferromagnetic Schottky diodes on heavily n-doped GaN semiconductor
Adari, R., Banerjee, D., Ganguly, S., Aldhaheri, R. W., Hussain, M. A., Saha, D.
Published in 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) (01.12.2012)
Published in 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) (01.12.2012)
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