Diffusion of implanted nitrogen in silicon
Shaik Adam, Lahir, Law, Mark E., Jones, Kevin S., Dokumaci, Omer, Murthy, C. S., Hegde, Suri
Published in Journal of applied physics (01.03.2000)
Published in Journal of applied physics (01.03.2000)
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Journal Article
Copper Contact for 22 nm and Beyond: Device Performance and Reliability Evaluation
Soon-Cheon Seo, Chih-Chao Yang, Miaomiao Wang, Monsieur, Frederic, Adam, Lahir, Johnson, Jeffrey B, Horak, Dave, Fan, Susan, Kangguo Cheng, Stathis, James, Doris, Bruce
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
Physical integrated diffusion-oxidation model for implanted nitrogen in silicon
Adam, Lahir Shaik, Law, Mark E., Dokumaci, Omer, Hegde, Suri
Published in Journal of applied physics (15.02.2002)
Published in Journal of applied physics (15.02.2002)
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Journal Article
Fabrication of CMOS transistors having differentially stressed spacers
HARAN BALASUBRAMANIAN S, DORIS BRUCE B, ADAM LAHIR SHAIK, MEHTA SANJAY C
Year of Publication 12.02.2013
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Year of Publication 12.02.2013
Patent
DEVICE WITH STRESSED CHANNEL
HARAN BALASUBRAMANIAN S, DORIS BRUCE B, ADAM LAHIR S, FALTERMEIER JOHNATHAN E
Year of Publication 10.02.2011
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Year of Publication 10.02.2011
Patent
Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layer
Mehrotra, Manoj, Adam, Lahir Shaik, Zhao, Song, Nandakumar, Mahalingam
Year of Publication 01.05.2007
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Year of Publication 01.05.2007
Patent