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CMOS architecture with thermally stable silicide gate workfunction metal
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Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer
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Year of Publication 01.04.2022
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CMOS CMOS ARCHITECTURE WITH THERMALLY STABLE SILICIDE GATE WORKFUNCTION METAL
LILAK AARON D, RACHMADY WILLY, HUANG CHENG YING, ACTON ORB, PHAN ANH, KAVALIEROS JACK T, DEWEY GILBERT, MANNEBACH EHREN
Year of Publication 29.03.2023
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Year of Publication 29.03.2023
Patent