Passivation and reactivation of shallow level defects in p-CdTe after low-energy hydrogen implantation
Reislöhner, U, Achtziger, N, Hülsen, C, Witthuhn, W
Published in Journal of crystal growth (01.06.2000)
Published in Journal of crystal growth (01.06.2000)
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Journal Article
Band gap states of V and Cr in 6H-silicon carbide
ACHTZIGER, N, GRILLENBERGER, J, WITTHUHN, W
Published in Applied physics. A, Materials science & processing (01.09.1997)
Published in Applied physics. A, Materials science & processing (01.09.1997)
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Journal Article
Investigation of indium-defect pairs in CdTe by PAC spectroscopy
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Journal Article
Conference Proceeding
Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide
Janson, M S, Linnarsson, M K, Hallén, A, Svensson, B G, Achtziger, N, Unéus, L, Lloyd Spetz, A, Forsberg, U
Published in Physica scripta (01.01.2004)
Published in Physica scripta (01.01.2004)
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Journal Article
Investigations on implantation doping of wide-bandgap II-VI compounds using radioactive dopants
Wienecke, M, Reinhold, B, Röhrich, J, Bollmann, J, Achtziger, N, Reislöhner, U, Witthuhn, W, Hermann, S, Collaboration, The ISOLDE
Published in Journal of physics. D, Applied physics (07.02.1999)
Published in Journal of physics. D, Applied physics (07.02.1999)
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Journal Article
Mobility, Passivating Effect and Thermal Stability of Hydrogen in Silicon Carbide
Achtziger, N., Hülsen, C., Witthuhn, W., Linnarsson, M.K., Janson, M., Svensson, B.G.
Published in Physica status solidi. B, Basic research (01.12.1998)
Published in Physica status solidi. B, Basic research (01.12.1998)
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Journal Article
Identification of deep bandgap states in 4H- and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy
Achtziger, N., Forkel-Wirth, D., Grillenberger, J., Licht, T., Witthuhn, W.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.03.1998)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.03.1998)
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Journal Article
Complex formation at indium donors in p-CdTe
Reislöhner, U., Achtziger, N., Rüb, M., Witthuhn, W.
Published in Journal of crystal growth (01.02.1996)
Published in Journal of crystal growth (01.02.1996)
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Journal Article
Conference Proceeding
Investigation of defects in KTiOPO4 after indium implantation and diffusion
Rüb, M., Achtziger, N., Licht, T., Reislöhner, U., Witthuhn, W.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.08.1996)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.08.1996)
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Journal Article
Complex formation in In- and Ag/Cu-doped CdTe
Rüb, M., Achtziger, N., Meier, J., Reislöhner, U., Rudolph, P., Wienecke, M., Witthuhn, W.
Published in Journal of crystal growth (02.04.1994)
Published in Journal of crystal growth (02.04.1994)
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Journal Article
Conference Proceeding
Hafnium, cadmium and indium impurities in 4H-SiC observed by perturbed angular correlation spectroscopy
Licht, T., Achtziger, N., Forkel-Wirth, D., Freitag, K., Grillenberger, J., Kaltenhäuser, M., Reislöhner, U., Rüb, M., Uhrmacher, M., Witthuhn, W.
Published in Diamond and related materials (01.08.1997)
Published in Diamond and related materials (01.08.1997)
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Journal Article
Damage production in GaAs during MeV ion implantation
Herre, O., Wendler, E., Achtziger, N., Licht, T., Reislöhner, U., Rüb, M., Bachmann, T., Wesch, W., Gaiduk, P.I., Komarov, F.F.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1996)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1996)
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Journal Article
Structural and electrical investigation of implantation damage annealing in CdTe
Achtziger, N, Bollmann, J, Licht, Th, Reinhold, B, Reislöhner, U, Röhrich, J, Rüb, M, Wienecke, M, Witthuhn, W, collaboration, the ISOLDE
Published in Semiconductor science and technology (01.06.1996)
Published in Semiconductor science and technology (01.06.1996)
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Journal Article
Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy
Forkel-Wirth, Doris, Achtziger, N, Burchard, A, Correia, J.C, Deicher, M, Licht, T, Magerle, R, Marques, J.G, Meier, J, Pfeiffer, W, Reislöhner, U, Rüb, M, Toulemonde, M, Witthuhn, W
Published in Solid state communications (1995)
Published in Solid state communications (1995)
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Journal Article
Deep levels of chromium in 4H-SiC
Achtziger, Norbert, Witthuhn, Wolfgang
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.04.1997)
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Journal Article
Combined PAC, C-V and DLTS measurements on p-CdTe
Reislöhner, U, Achtziger, N, Rüb, M, Wienecke, M, Witthuhn, W
Published in Solid state communications (01.02.1995)
Published in Solid state communications (01.02.1995)
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Journal Article