Highly doped p-type 3C–SiC on 6H–SiC substrates
Lebedev, A A, Abramov, P L, Bogdanova, E V, Lebedev, S P, Nel'son, D K, Oganesyan, G A, Tregubova, A S, Yakimova, R
Published in Semiconductor science and technology (01.07.2008)
Published in Semiconductor science and technology (01.07.2008)
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Journal Article
4H-SiC p–i–n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes
Camara, N, Zekentes, K, Zelenin, V V, Abramov, P L, Kirillov, A V, Romanov, L P, Boltovets, N S, Krivutsa, V A, Thuaire, A, Bano, E, Tsoi, E, Lebedev, A A
Published in Semiconductor science and technology (01.02.2008)
Published in Semiconductor science and technology (01.02.2008)
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Journal Article
Negative magnetoresistance in SiC heteropolytype junctions
Lebedev, Alexander Alexandrovich, Abramov, P. L., Agrinskaya, N. V., Kozub, V. I., Kuznetsov, A. N., Lebedev, S. P., Oganesyan, G. A., Sorokin, L. M., Chernyaev, A. V., Shamshur, D. V.
Published in Journal of materials science. Materials in electronics (01.09.2008)
Published in Journal of materials science. Materials in electronics (01.09.2008)
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Journal Article
Metal-insulator transition in n-3C-SiC epitaxial films
Lebedev, A. A., Abramov, P. L., Agrinskaya, N. V., Kozub, V. I., Lebedev, S. P., Oganesyan, G. A., Tregubova, A. S., Shamshur, D. V., Skvortsova, M. O.
Published in Journal of applied physics (15.01.2009)
Published in Journal of applied physics (15.01.2009)
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Journal Article
Metal-insulator transition in n - 3 C -SiC epitaxial films
Lebedev, A. A., Abramov, P. L., Agrinskaya, N. V., Kozub, V. I., Lebedev, S. P., Oganesyan, G. A., Tregubova, A. S., Shamshur, D. V., Skvortsova, M. O.
Published in Journal of applied physics (23.01.2009)
Published in Journal of applied physics (23.01.2009)
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Journal Article
Study of the 3C-SiC layers grown on the 15R-SiC substrates
Lebedev, A. A., Abramov, P. L., Bogdanova, E. V., Zubrilov, A. S., Lebedev, S. P., Nelson, D. K., Seredova, N. V., Smirnov, A. N., Tregubova, A. S.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2009)
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Journal Article
Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates
Lebedev, A. A., Abramov, P. L., Bogdanova, E. V., Lebedev, S. P., Nel’son, D. K., Razbirin, B. S., Tregubova, A. S.
Published in Technical physics letters (01.06.2010)
Published in Technical physics letters (01.06.2010)
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Journal Article
Use of sublimation epitaxy for obtaining volume 3C-SiC crystals
Lebedev, A. A., Abramov, P. L., Zubrilov, A. S., Bogdanova, E. V., Lebedev, S. P., Seredova, N. V., Tregubova, A. S.
Published in Technical physics letters (01.06.2010)
Published in Technical physics letters (01.06.2010)
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Journal Article
Fabrication of improved-quality seed crystals for growth of bulk silicon carbide
Mynbaeva, M. G., Abramov, P. L., Lebedev, A. A., Tregubova, A. S., Litvin, D. P., Vasiliev, A. V., Chemekova, T. Yu, Makarov, Yu. N.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2011)
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Journal Article
A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum
Lebedev, A. A., Zelenin, V. V., Abramov, P. L., Bogdanova, E. V., Lebedev, S. P., Nel’son, D. K., Razbirin, B. S., Shcheglov, M. P., Tregubova, A. S., Suvajarvi, M., Yakimova, R.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2007)
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Journal Article
Metal-insulator transition in n-3C-SiC epitaxial films
Lebedev, A. A., Abramov, P. L., Agrinskaya, N. V., Kozub, V. I., Kuznetsov, A. N., Lebedev, S. P., Oganesyan, G. A., Tregubova, A. S., Chernyaev, A. V., Shamshur, D. V., Skvortsova, M. O.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2009)
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Journal Article
Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates
Lebedev, A. A., Abramov, P. L., Agrinskaya, N. V., Kozub, V. I., Kuznetsov, A. N., Lebedev, S. P., Oganesyan, G. A., Sorokin, L. M., Chernyaev, A. V., Shamshur, D. V.
Published in Technical physics letters (01.12.2007)
Published in Technical physics letters (01.12.2007)
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Journal Article
Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates
Lebedev, A. A., Zelenin, V. V., Abramov, P. L., Lebedev, S. P., Smirnov, A. N., Sorokin, L. M., Shcheglov, M. P., Yakimova, R.
Published in Technical physics letters (01.06.2007)
Published in Technical physics letters (01.06.2007)
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Journal Article
Highly doped p-type 3C-SiC on 6H-SiC substrates
LEBEDEV, A. A, ABRAMOV, P. L, BOGDANOVA, E. V, LEBEDEV, S. P, NEL'SON, D. K, OGANESYAN, G. A, TREGUBOVA, A. S, YAKIMOVA, R
Published in Semiconductor science and technology (2008)
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Published in Semiconductor science and technology (2008)
Journal Article
4H-SiC p-i-n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes
CAMARA, N, ZEKENTES, K, TSOI, E, LEBEDEV, A. A, ZELENIN, V. V, ABRAMOV, P. L, KIRILLOV, A. V, ROMANOV, L. P, BOLTOVETS, N. S, KRIVUTSA, V. A, THUAIRE, A, BANO, E
Published in Semiconductor science and technology (2008)
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Published in Semiconductor science and technology (2008)
Journal Article
Negative magnetoresistance in SiC heteropolytype junctions
LEBEDEV, Alexander Alexandrovich, ABRAMOV, P. L, AGRINSKAYA, N. V, KOZUB, V. I, KUZNETSOV, A. N, LEBEDEV, S. P, OGANESYAN, G. A, SOROKIN, L. M, CHERNYAEV, A. V, SHAMSHUR, D. V
Published in Journal of materials science. Materials in electronics (2008)
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Published in Journal of materials science. Materials in electronics (2008)
Conference Proceeding
SiC heteropolytype structures for optical applications
Lebedev, A.A., Zelenin, V.V., Kuznetsov, A.N., Abramov, P.L., Smirnov, A.N., Davydov, S.Yu, Tregubova, A.S.
Published in 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference (01.06.2007)
Published in 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference (01.06.2007)
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Conference Proceeding