Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection
Kang, B.S., Kim, S., Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.
Published in Sensors and actuators. B, Chemical (24.01.2005)
Published in Sensors and actuators. B, Chemical (24.01.2005)
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Journal Article
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN
Hite, J.K., Frazier, R.M., Davies, R.P., Thaler, G.T., Abernathy, C.R., Pearton, S.J., Zavada, J.M., Brown, E., Hömmerich, U.
Published in Journal of electronic materials (01.04.2007)
Published in Journal of electronic materials (01.04.2007)
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Journal Article
Comparison of Pt/GaN and Pt/4H-SiC gas sensors
Kim, Jihyun, Gila, B.P., Abernathy, C.R., Chung, G.Y., Ren, F., Pearton, S.J.
Published in Solid-state electronics (01.09.2003)
Published in Solid-state electronics (01.09.2003)
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Journal Article
GaN electronics for high power, high temperature applications
Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Journal Article
AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing
Kang, B.S., Suku Kim, Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.
Published in IEEE sensors journal (01.08.2005)
Published in IEEE sensors journal (01.08.2005)
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Journal Article
Effects of defects and doping on wide band gap ferromagnetic semiconductors
Pearton, S.J, Abernathy, C.R, Thaler, G.T, Frazier, R, Ren, F, Hebard, A.F, Park, Y.D, Norton, D.P, Tang, W, Stavola, M, Zavada, J.M, Wilson, R.G
Published in Physica. B, Condensed matter (31.12.2003)
Published in Physica. B, Condensed matter (31.12.2003)
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Journal Article
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
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Journal Article
Wet chemical etching survey of III-nitrides
Vartuli, C.B., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Ren, F., Zolper, J.C., Shul, R.J.
Published in Solid-state electronics (01.12.1997)
Published in Solid-state electronics (01.12.1997)
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Journal Article
Luminescence characteristics of Er-doped GaN semiconductor thin films
Zavada, J.M, Thaik, Myo, Hömmerich, U, MacKenzie, J.D, Abernathy, C.R, Pearton, S.J, Wilson, R.G
Published in Journal of alloys and compounds (12.04.2000)
Published in Journal of alloys and compounds (12.04.2000)
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Journal Article
Gate breakdown characteristics of MgO/GaN MOSFETs
Cho, Hyun, Lee, K.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F.
Published in Solid-state electronics (01.09.2003)
Published in Solid-state electronics (01.09.2003)
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Journal Article
Influence of gate oxide thickness on Sc2O3/GaN MOSFETs
Cho, Hyun, Lee, K.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F.
Published in Solid-state electronics (01.10.2003)
Published in Solid-state electronics (01.10.2003)
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Journal Article
Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN
Kent, D.G, Lee, K.P, Zhang, A.P, Luo, B, Overberg, M.E, Abernathy, C.R, Ren, F, Mackenzie, K.D, Pearton, S.J, Nakagawa, Y
Published in Solid-state electronics (01.03.2001)
Published in Solid-state electronics (01.03.2001)
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Journal Article
Schottky rectifiers fabricated on free-standing GaN substrates
Johnson, J.W., LaRoch, J.R., Ren, F., Gila, B.P., Overberg, M.E., Abernathy, C.R., Chyi, J.-I., Chuo, C.C., Nee, T.E., Lee, C.M., Lee, K.P., Park, S.S., Park, Y.J., Pearton, S.J.
Published in Solid-state electronics (01.03.2001)
Published in Solid-state electronics (01.03.2001)
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Journal Article
Dry etching of GaN and related materials: comparison of techniques
Jewon Lee, Hyun Cho, Hays, D.C., Abernathy, C.R., Pearton, S.J., Shul, R.J., Vawter, G.A., Han, J.
Published in IEEE journal of selected topics in quantum electronics (01.05.1998)
Published in IEEE journal of selected topics in quantum electronics (01.05.1998)
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Journal Article
Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics
Ren, F, Abernathy, C.R, MacKenzie, J.D, Gila, B.P, Pearton, S.J, Hong, M, Marcus, M.A, Schurman, M.J, Baca, A.G, Shul, R.J
Published in Solid-state electronics (01.12.1998)
Published in Solid-state electronics (01.12.1998)
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Journal Article
Comparison of plasma etch techniques for III–V nitrides
Shul, R.J, Vawter, G.A, Willison, C.G, Bridges, M.M, Lee, J.W, Pearton, S.J, Abernathy, C.R
Published in Solid-state electronics (01.12.1998)
Published in Solid-state electronics (01.12.1998)
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Journal Article
High-density plasma etch selectivity for the III–V nitrides
Shul, R.J, Willison, C.G, Bridges, M.M, Han, J, Lee, J.W, Pearton, S.J, Abernathy, C.R, MacKenzie, J.D, Donovan, S.M
Published in Solid-state electronics (01.12.1998)
Published in Solid-state electronics (01.12.1998)
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Journal Article
Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy
Antonell, M.J, Abernathy, C.R, Sher, A, Berding, M, Van Schilfgaarde, M, Sanjuro, A, Wong, K
Published in Journal of crystal growth (01.06.1998)
Published in Journal of crystal growth (01.06.1998)
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Journal Article
Conference Proceeding
Ferromagnetism in Mn- and Cr-implanted AlGaP
Overberg, M.E., Thaler, G.T., Frazier, R.M., Rairigh, R., Kelly, J., Abernathy, C.R., Pearton, S.J., Hebard, A.F., Wilson, R.G., Zavada, J.M.
Published in Solid-state electronics (01.09.2003)
Published in Solid-state electronics (01.09.2003)
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Journal Article
Low energy electron-enhanced etching of GaN/Si in hydrogen direct current plasma
GILLIS, H. P, CHOUTOV, D. A, MARTIN, K. P, PEARTON, S. J, ABERNATHY, C. R
Published in Journal of the Electrochemical Society (01.11.1996)
Published in Journal of the Electrochemical Society (01.11.1996)
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Journal Article