A New 200 V Dual Trench MOSFET With Stepped Oxide for Ultra Low RDS(on)
Park, Chanho, Azam, Misbah, Dengel, Gabriel, Shibib, Ayman, Terrill, Kyle
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
INTEGRATED CIRCUIT DESIGN
BOBDE MADHUR, GAO YANG, CHEN QUFEI, AZAM MISBAH UL, SHI SHARON, TERRILL KYLE
Year of Publication 14.01.2015
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Year of Publication 14.01.2015
Patent
SEMICONDUCTOR DEVICE
BOBDE MADHUR, GAO YANG, CHEN QUFEI, AZAM MISBAH UL, SHI SHARON, TERRILL KYLE
Year of Publication 09.01.2015
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Year of Publication 09.01.2015
Patent