Special Topic on Tunnel Field-Effect Transistors
Avci, Uygar E.
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2020)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2020)
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Journal Article
Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal-Oxide-Semiconductor Capacitor
Chang, Sou-Chi, Avci, Uygar E., Nikonov, Dmitri E., Young, Ian A.
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2018)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.12.2018)
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Journal Article
Tunnel Field-Effect Transistors: Prospects and Challenges
Avci, Uygar E., Morris, Daniel H., Young, Ian A.
Published in IEEE journal of the Electron Devices Society (01.05.2015)
Published in IEEE journal of the Electron Devices Society (01.05.2015)
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Journal Article
Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction
Si, Mengwei, Zhang, Zhuocheng, Chang, Sou-Chi, Haratipour, Nazila, Zheng, Dongqi, Li, Junkang, Avci, Uygar E, Ye, Peide D
Published in ACS nano (23.03.2021)
Published in ACS nano (23.03.2021)
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Journal Article
Improving Energy Efficiency of Low-Voltage Logic by Technology-Driven Design
Vaidyanathan, Kaushik, Morris, Daniel H., Avci, Uygar E., Liu, Huichu, Karnik, Tanay, Wang, Hong, Young, Ian A.
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2018)
Published in IEEE journal on exploratory solid-state computational devices and circuits (01.06.2018)
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Journal Article
Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions
Zheng, Dongqi, Si, Mengwei, Chang, Sou-Chi, Haratipour, Nazila, Chen, Zhizhong, Charnas, Adam, Huang, Shouyuan, Wang, Kang, Dou, Letian, Xu, Xianfan, Avci, Uygar E., Ye, Peide D.
Published in Journal of applied physics (07.08.2022)
Published in Journal of applied physics (07.08.2022)
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Journal Article
Asymmetric Metal/α-In 2 Se 3 /Si Crossbar Ferroelectric Semiconductor Junction
Si, Mengwei, Zhang, Zhuocheng, Chang, Sou-Chi, Haratipour, Nazila, Zheng, Dongqi, Li, Junkang, Avci, Uygar E, Ye, Peide D
Published in ACS nano (23.03.2021)
Published in ACS nano (23.03.2021)
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Journal Article
Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs
Kim, Raseong, Avci, Uygar E., Young, Ian A.
Published in IEEE journal of the Electron Devices Society (01.01.2015)
Published in IEEE journal of the Electron Devices Society (01.01.2015)
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Journal Article
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
Silva, José P. B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe
Published in APL materials (01.08.2023)
Published in APL materials (01.08.2023)
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Journal Article
Heterojunction TFET Scaling and resonant-TFET for steep subthreshold slope at sub-9nm gate-length
Avci, Uygar E., Young, Ian A.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET
Avci, Uygar E., Chu-Kung, Benjamin, Agrawal, Ashish, Dewey, Gilbert, Van Le, Rios, Rafael, Morris, Daniel H., Hasan, Sayed, Kotlyar, Roza, Kavalieros, Jack, Young, Ian A.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Tunneling field effect transistors: Device and circuit considerations for energy efficient logic opportunities
Young, Ian A., Avci, Uygar E., Morris, Daniel H.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Hafnium-based FeRAM for Next-generation High-speed and High-Density Embedded Memory
Chang, Sou-Chi, Avci, Uygar E
Published in 2022 IEEE Silicon Nanoelectronics Workshop (SNW) (11.06.2022)
Published in 2022 IEEE Silicon Nanoelectronics Workshop (SNW) (11.06.2022)
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Conference Proceeding