On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation
Querlioz, D., Saint-Martin, J., Huet, K., Bournel, A., Aubry-Fortuna, V., Chassat, C., Galdin-Retailleau, S., Dollfus, P.
Published in IEEE transactions on electron devices (01.09.2007)
Published in IEEE transactions on electron devices (01.09.2007)
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Journal Article
Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers
Defives, D., Noblanc, O., Dua, C., Brylinski, C., Barthula, M., Aubry-Fortuna, V., Meyer, F.
Published in IEEE transactions on electron devices (01.03.1999)
Published in IEEE transactions on electron devices (01.03.1999)
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Journal Article
Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation
AUBRY-FORTUNA, V, DOLLFUS, P, GALDIN-RETAILLEAU, S
Published in Solid-state electronics (01.08.2005)
Published in Solid-state electronics (01.08.2005)
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Journal Article
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
Palestri, P., Alexander, C., Asenov, A., Aubry-Fortuna, V., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Fenouillet-Beranger, C., Fiegna, C., Fiori, G., Ghetti, A., Iannaccone, G., Martinez, A., Majkusiak, B., Monfray, S., Peikert, V., Reggiani, S., Riddet, C., Saint-Martin, J., Sangiorgi, E., Schenk, A., Selmi, L., Silvestri, L., Toniutti, P., Walczak, J.
Published in Solid-state electronics (01.12.2009)
Published in Solid-state electronics (01.12.2009)
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Journal Article
Giant piezoresistance effect in p-type silicon
Nghiem, T T Trang, Aubry-Fortuna, V, Chassat, C, Bosseboeuf, A, Dollfus, P
Published in 2010 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2010)
Published in 2010 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2010)
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Conference Proceeding
Monte Carlo simulation of double gate MOSFET including multi sub-band description
Saint-Martin, J., Bournel, A., Aubry-Fortuna, V., Monsef, F., Chassat, C., Dollfus, P.
Published in Journal of computational electronics (01.12.2006)
Published in Journal of computational electronics (01.12.2006)
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Journal Article
Influence of Ballistic Effects in Ultra-Small MOSFETs
Martin, J. Saint, Aubry-Fortuna, V., Bournel, A., Dollfus, P., Galdin, S., Chassat, C.
Published in Journal of computational electronics (01.10.2004)
Published in Journal of computational electronics (01.10.2004)
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Journal Article
Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots
Hattab, A, Aubry-Fortuna, V, Meyer, F, Yam, Vy, Le Thanh, Vinh, Bouchier, D, Clerc, C
Published in Microelectronic engineering (01.10.2002)
Published in Microelectronic engineering (01.10.2002)
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Journal Article
Conference Proceeding
Annealing of thin Zr films on Si1-xGex(0 ≤ x ≤ 1): X-ray diffraction and Raman studies
CHAIX-PLUCHERY, O, CHENEVIER, B, AUBRY-FORTUNA, V, MATKO, I
Published in The Journal of physics and chemistry of solids (01.10.2002)
Published in The Journal of physics and chemistry of solids (01.10.2002)
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Journal Article
UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane
Vinh, Le Thanh, Aubry-Fortuna, V., Zheng, Y., Bouchier, D., Guedj, C., Hincelin, G.
Published in Thin solid films (15.02.1997)
Published in Thin solid films (15.02.1997)
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Journal Article
Schottky barrier heights on IV-IV compound semiconductors
Meyer, F, Mamor, M, Aubry-Fortuna, V, Warren, P
Published in Journal of electronic materials (01.11.1996)
Published in Journal of electronic materials (01.11.1996)
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Journal Article
Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation
Mamor, M, Perrossier, J.-L, Aubry-Fortuna, V, Meyer, F, Bouchier, D, Bodnar, S, Regolini, J.L
Published in Thin solid films (15.02.1997)
Published in Thin solid films (15.02.1997)
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Journal Article
Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation
Bournel, A., Aubry-Fortuna, V., Saint-Martin, J., Dollfus, P.
Published in Solid-state electronics (01.04.2007)
Published in Solid-state electronics (01.04.2007)
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Journal Article
Drain current computation in nanoscale nMOSFETs: Comparison of transport models
Sangiorgi, E, Alexander, C, Asenov, A, Aubry-Fortuna, V, Baccarani, G, Bournel, A, Braccioli, M, Cheng, B, Dollfus, P, Esposito, A, Esseni, D, Fenouillet-Beranger, C, Fiegna, C, Fiori, G, Ghetti, A, Iannaccone, G, Martinez, A, Majkusiak, B, Monfray, S, Palestri, P, Peikert, V, Reggiani, S, Riddet, C, Saint-Martin, J, Schenk, A, Selmi, L, Silvestri, L, Toniutti, P, Walczak, J
Published in 2010 27th International Conference on Microelectronics Proceedings (01.05.2010)
Published in 2010 27th International Conference on Microelectronics Proceedings (01.05.2010)
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Conference Proceeding
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs: Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009
PALESTRI, P, ALEXANDER, C, ESSENI, D, FENOUILLET-BERANGER, C, FIEGNA, C, FIORI, G, GHETTI, A, IANNACCONE, G, MARTINEZ, A, MAJKUSIAK, B, MONFRAY, S, PEIKERT, V, ASENOV, A, REGGIANI, S, RIDDET, C, SAINT-MARTIN, J, SANGIORGI, E, SCHENK, A, SELMI, L, SILVESTRI, L, TONIUTTI, P, WALCZAK, J, AUBRY-FORTUNA, V, BACCARANI, G, BOURNEL, A, BRACCIOLI, M, CHENG, B, DOLLFUS, P, ESPOSITO, A
Published in Solid-state electronics (2009)
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Published in Solid-state electronics (2009)
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