SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices
Aubry, R., Jacquet, J.-C., Weaver, J., Durand, O., Dobson, P., Mills, G., di Forte-Poisson, M.-A., Cassette, S., Delage, S.-L.
Published in IEEE transactions on electron devices (01.03.2007)
Published in IEEE transactions on electron devices (01.03.2007)
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Journal Article
Depressive symptoms and upward social comparisons during Instagram use: A vicious circle
Aubry, Raphaël, Quiamzade, Alain, Meier, Laurenz L.
Published in Personality and individual differences (01.02.2024)
Published in Personality and individual differences (01.02.2024)
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Journal Article
Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
Malmros, Anna, Gamarra, Piero, Di Forte-Poisson, Marie-Antoinette, Hjelmgren, Hans, Lacam, Cedric, Thorsell, Mattias, Tordjman, Maurice, Aubry, Raphael, Rorsman, Niklas
Published in IEEE electron device letters (01.03.2015)
Published in IEEE electron device letters (01.03.2015)
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Journal Article
Effects of Surface Passivation and Deposition Methods on the 1/ f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
Do, Thanh Ngoc Thi, Malmros, Anna, Gamarra, Piero, Lacam, Cedric, Di Forte-Poisson, Marie-Antoinette, Tordjman, Maurice, Horberg, Mikael, Aubry, Raphael, Rorsman, Niklas, Kuylenstierna, Dan
Published in IEEE electron device letters (01.04.2015)
Published in IEEE electron device letters (01.04.2015)
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Journal Article
Large‐Scale‐Compatible Stabilization of a 2D Semiconductor Platform toward Discrete Components
Brus, Pierre, Zatko, Victor, Galbiati, Marta, Godel, Florian, Collin, Sophie, Servet, Bernard, Xavier, Stephane, Aubry, Raphael, Garabedian, Patrick, Martin, Marie‐Blandine, Dlubak, Bruno, Seneor, Pierre, Bezencenet, Odile
Published in Advanced electronic materials (01.04.2021)
Published in Advanced electronic materials (01.04.2021)
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Journal Article
Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
Malmros, Anna, Gamarra, Piero, Thorsell, Mattias, Forte-Poisson, Marie-Antoinette di, Lacam, Cedric, Tordjman, Maurice, Aubry, Raphaël, Zirath, Herbert, Rorsman, Niklas
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters
Potier, Clément, Jacquet, Jean-Claude, Dua, Christian, Martin, Audrey, Campovecchio, Michel, Oualli, Mourad, Jardel, Olivier, Piotrowicz, Stéphane, Laurent, Sylvain, Aubry, Raphaël, Patard, Olivier, Gamarra, Piero, di Forte-Poisson, Marie-Antoinette, Delage, Sylvain L., Quéré, Raymond
Published in International journal of microwave and wireless technologies (01.06.2015)
Published in International journal of microwave and wireless technologies (01.06.2015)
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Journal Article
InAlN/GaN HEMTs based L-band high-power packaged amplifiers
Jardel, Olivier, Jacquet, Jean-Claude, Baczkowski, Lény, Carisetti, Dominique, Lancereau, Didier, Olivier, Maxime, Aubry, Raphaël, di Forte Poisson, Marie-Antoinette, Dua, Christian, Piotrowicz, Stéphane, Delage, Sylvain L.
Published in International journal of microwave and wireless technologies (01.12.2014)
Published in International journal of microwave and wireless technologies (01.12.2014)
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Journal Article
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process
Jardel, Olivier, Callet, Guillaume, Dufraisse, Jérémy, Piazza, Michele, Sarazin, Nicolas, Chartier, Eric, Oualli, Mourad, Aubry, Raphaël, Reveyrand, Tibault, Jacquet, Jean-Claude, Di Forte Poisson, Marie-Antoinette, Morvan, Erwan, Piotrowicz, Stéphane, Delage, Sylvain L.
Published in International journal of microwave and wireless technologies (01.06.2011)
Published in International journal of microwave and wireless technologies (01.06.2011)
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Journal Article
Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs
Lancry, O., Pichonat, E., Réhault, J., Moreau, M., Aubry, R., Gaquière, C.
Published in Solid-state electronics (01.11.2010)
Published in Solid-state electronics (01.11.2010)
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Journal Article
Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Piotrowicz, Stéphane, Morvan, Erwan, Aubry, Raphaël, Callet, Guillaume, Chartier, Eric, Dua, Christian, Dufraisse, Jérémy, Floriot, Didier, Jacquet, Jean-Claude, Jardel, Olivier, Mancuso, Yves, Mallet-Guy, Benoit, Oualli, Mourad, Ouarch, Zineb, Di-Forte Poisson, Marie-Antoinette, Sarazin, Nicolas, Stanislawiak, Michel, Delage, Sylvain
Published in International journal of microwave and wireless technologies (01.02.2010)
Published in International journal of microwave and wireless technologies (01.02.2010)
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Journal Article
Dielectric charging model for metal-insulator-metal structures
Amiaud, Anne-Charlotte, Leuliet, Aude, Nagle, Julien, Loiseaux, Brigitte, Martins, Paolo, Aubry, Raphael, Hole, Stephane
Published in 2017 International Symposium on Electrical Insulating Materials (ISEIM) (01.09.2017)
Published in 2017 International Symposium on Electrical Insulating Materials (ISEIM) (01.09.2017)
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Conference Proceeding
Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach
Santarelli, A., Di Giacomo, V., Raffo, A., Filicori, F., Vannini, G., Aubry, R., Gaquière, C.
Published in International journal of RF and microwave computer-aided engineering (01.11.2008)
Published in International journal of RF and microwave computer-aided engineering (01.11.2008)
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Journal Article
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application
di Forte Poisson, M.-A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Toth, L., Pecz, B., Guziewicz, M., Thorpe, J., Aubry, R., Morvan, E., Sarazin, N., Gaquière, C., Meneghesso, G., Hoel, V., Jacquet, J.-C., Delage, S.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Conference Proceeding
160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
Piotrowicz, S., Jardel, O., Jacquet, J.-C, Lancereau, D., Aubry, R., Morvan, E., Sarazin, N., Dufraisse, J., Dua, C., Oualli, M., Chartier, E., Poisson, M. A. Di-Forte, Gaquière, C., Delage, S. L.
Published in 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2012)
Published in 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2012)
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Conference Proceeding
High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate
Werquin, M., Ducatteau, D., Vellas, N., Delos, E., Cordier, Y., Aubry, R., Gaquière, C.
Published in Microwave and optical technology letters (01.11.2006)
Published in Microwave and optical technology letters (01.11.2006)
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Journal Article
OPTICAL TRANSMISSION ELEMENT, HAVING A SUPER-HYDROPHOBIC NANOSTRUCTURED SURFACE HAVING AN ANTI-REFLECTIVE PROPERTY AND COVERED WITH A COMPLIANT HIGH-DENSITY THIN FILM DEPOSIT
LEE BOUHOURS, Mane-Si-Laure, CHOLET, Julie, AUBRY, Raphaël, MARTINS, José-Paolo, GUILLEMET, Raphaël, DELBOULBE, Anne, LEHOUCQ, Gaëlle
Year of Publication 14.02.2024
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Year of Publication 14.02.2024
Patent
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD
di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Morvan, E., Aubry, R., di Persio, J., Grimbert, B.
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding