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Published in Journal of natural medicines (01.06.2019)
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Effectiveness of three types of lumbar orthosis for restricting extension motion
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Published in European journal of orthopaedic surgery & traumatology (01.07.2014)
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Thermal characteristics of 3kV, 600A 4H-SiC flat-package pn diodes
Ogata, Syuji, Takayama, Daisuke, Asano, Katsunori, Sugawara, Yoshitaka
Published in Electrical engineering in Japan (01.06.2010)
Published in Electrical engineering in Japan (01.06.2010)
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Journal Article
Study of reverse recovery characteristic for 3-kV 600-A 4H-SiC flat package type pn diodes
Ogata, Syuji, Takayama, Daisuke, Asano, Katsunori, Sugawara, Yoshitaka
Published in Electrical engineering in Japan (15.07.2007)
Published in Electrical engineering in Japan (15.07.2007)
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Fukuda, Kenji, Okamoto, Dai, Okamoto, Mitsuo, Deguchi, Tadayoshi, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Harada, Shinsuke, Tanaka, Yasunori, Yonezawa, Yoshiyuki, Kato, Tomohisa, Katakami, Shuji, Arai, Manabu, Takei, Manabu, Matsunaga, Shinichiro, Takao, Kazuto, Shinohe, Takashi, Izumi, Toru, Hayashi, Toshihiko, Ogata, Syuuji, Asano, Katsunori, Okumura, Hajime, Kimoto, Tsunenobu
Published in IEEE transactions on electron devices (01.02.2015)
Published in IEEE transactions on electron devices (01.02.2015)
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Journal Article
Heavily Electron-irradiated High Resistive 4H-SiC pin diode for Turn-on Snubber of 200kVA Class High Power SiCGT Inverter
Asano, K., Sugawara, Y., Tanaka, A., Miyanagi, Y., Nakayama, K., Ogata, S., Okada, S., Izumi, T., Ishii, R.
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01.05.2008)
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Conference Proceeding
Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation
Nakayama, K., Tanaka, A., Nishimura, M., Asano, K., Miyazawa, T., Ito, M., Tsuchida, H.
Published in IEEE transactions on electron devices (01.04.2012)
Published in IEEE transactions on electron devices (01.04.2012)
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Journal Article
Conductivity Degradation of 4H-SiC p--i--n Diode with In-Grown Stacking Faults
Tanaka, Atsushi, Nakayama, Koji, Asano, Katsunori, Miyazawa, Tetsuya, Tsuchida, Hidekazu
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs
Ishida, Yuuki, Asano, Katsunori, Kojima, Kazutoshi, Miyazawa, Tetsuya, Tanaka, Atsushi, Nakayama, Koji, Tsuchida, Hidekazu, Ji, Shi Yang
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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BIPOLAR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
MIYAZAWA TETSUYA, ITSUMI TETSURO, TSUCHIDA SHUICHI, NAKAYAMA KOJI, ASANO KATSUNORI
Year of Publication 07.05.2015
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Year of Publication 07.05.2015
Patent
BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
HEMMI, TETSURO, TSUCHIDA, HIDEKAZU, MIYAZAWA, TETSUYA, ASANO, KATSUNORI, NAKAYAMA, KOJI
Year of Publication 07.05.2015
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Year of Publication 07.05.2015
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SEMICONDUCTOR DEVICE
HAYASHI TOSHIHIKO, SAIKI TOMOAKI, ASANO KATSUNORI, HIWATARI KENICHIRO, IZUMI TORU
Year of Publication 08.12.2014
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Year of Publication 08.12.2014
Patent