Novel Negative $Vt$ Shift Phenomenon of Program-Inhibit Cell in $\hbox{2}X{-}\hbox{3}X\hbox{-}\hbox{nm}$ Self-Aligned STI nand Flash Memory
Aritome, Seiichi, Seo, Soonok, Kim, Hyung-Seok, Park, Sung-Kye, Lee, Seok-Kiu, Hong, Sungjoo
Published in IEEE transactions on electron devices (01.11.2012)
Published in IEEE transactions on electron devices (01.11.2012)
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Journal Article
Data-Retention Characteristics Comparison of 2D and 3D TLC NAND Flash Memories
Mizoguchi, Kyoji, Takahashi, Tomonori, Aritome, Seiichi, Takeuchi, Ken
Published in 2017 IEEE International Memory Workshop (IMW) (01.05.2017)
Published in 2017 IEEE International Memory Workshop (IMW) (01.05.2017)
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Conference Proceeding
A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory
Yoohyun Noh, Youngsoo Ahn, Hyunseung Yoo, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Aritome, S., Sungjoo Hong, Sungwook Park
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
Compact Modeling of Negative Shift Disturb in NAND Flash Memories
Zambelli, Cristian, Andrian, Fabio, Aritome, Seiichi, Olivo, Piero
Published in IEEE transactions on electron devices (01.04.2016)
Published in IEEE transactions on electron devices (01.04.2016)
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Journal Article
Compact Modeling of Negative V Shift Disturb in NAND Flash Memories
Zambelli, Cristian, Andrian, Fabio, Aritome, Seiichi, Olivo, Piero
Published in IEEE transactions on electron devices (01.04.2016)
Published in IEEE transactions on electron devices (01.04.2016)
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Journal Article