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Published in Japanese Journal of Applied Physics (1996)
Published in Japanese Journal of Applied Physics (1996)
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Conference Proceeding
Journal Article
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Year of Publication 26.12.2019
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Year of Publication 26.12.2019
Patent
Analysis of Si–Ge Source Structure in 0.15 µm SOI MOSFETs Using Two-Dimensional Device Simulation
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Published in Japanese Journal of Applied Physics (01.02.1996)
Published in Japanese Journal of Applied Physics (01.02.1996)
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Journal Article
Analysis of Si-Ge source structure in 0.15 μm SOI MOSFETs using two-dimensional device simulation
ARISUMI, O, MATSUZAWA, K, SHIGYO, N, TERAUCHI, M, NISHIYAMA, A, YOSHIMI, M
Published in Japanese journal of applied physics (01.02.1996)
Published in Japanese journal of applied physics (01.02.1996)
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Conference Proceeding
A METHOD FOR TREATMENT OF POLYSILAZANE OR POLYSILAZANE SOLUTION, THE POLYSILAZANE OR POLYSILAZANE SOLUTION, AND A FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE
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Year of Publication 21.04.2010
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Year of Publication 21.04.2010
Patent
Memory device
Hamada, Tatsufumi, Kuki, Tomohiro, Sotome, Shinichi, Oshima, Yasunori, Uchimura, Yasuhiro, Arisumi, Osamu
Year of Publication 02.04.2024
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Year of Publication 02.04.2024
Patent
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
WEN, Fan, FUJITA, Junya, FUKUMOTO, Atsushi, ITO, Takayuki, ARISUMI, Osamu
Year of Publication 10.03.2022
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Year of Publication 10.03.2022
Patent