CHARACTERIZATION OF (Bi,Nd) 4 Ti 3 O 12 /HfO 2 /p-TYPE Si STRUCTURES FOR MFIS-FeRAM APPLICATION
TABUCHI, YOSHIAKI, AIZAWA, KOUZI, TAMURA, TETSURO, TAKAHASHI, KAZUHIRO, HOKO, HIROMASA, KATO, KAZUMI, ARIMOTO, YOSHIHIRO, ISHIWARA, HIROSHI
Published in Integrated ferroelectrics (01.11.2006)
Published in Integrated ferroelectrics (01.11.2006)
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Formation of Ferroelectric (Bi, Nd)4Ti3O12 Thin Films on HfO2/Si(100) Structures for MFIS-type Ferroelectric Memory Applications
TABUCHI, YOSHIAKI, PARK, BYUNG-EUN, AIZAWA, KOUZI, KAWASHIMA, YOSHIHITO, TAKAHASHI, KAZUHIRO, KATO, KAZUMI, ARIMOTO, YOSHIHIRO, ISHIWARA, HIROSHI
Published in Integrated ferroelectrics (01.01.2004)
Published in Integrated ferroelectrics (01.01.2004)
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New 1T/2C merged two-terminal gain cell with SBT encapsulated floating gate MOSFET for highly scalable FeRAM
Aoki, Masaki, Mushiga, Mitsuteru, Itoh, Akio, Eshita, Takashi, Arimoto, Yoshihiro
Published in Digest of technical papers - Symposium on VLSI Technology (01.01.1999)
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Published in Digest of technical papers - Symposium on VLSI Technology (01.01.1999)
Journal Article
Formation of Ferroelectric (Bi, Nd) 4 Ti 3 O 12 Thin Films on HfO 2 /Si(100) Structures for MFIS-type Ferroelectric Memory Applications
TABUCHI, YOSHIAKI, PARK, BYUNG-EUN, AIZAWA, KOUZI, KAWASHIMA, YOSHIHITO, TAKAHASHI, KAZUHIRO, KATO, KAZUMI, ARIMOTO, YOSHIHIRO, ISHIWARA, HIROSHI
Published in Integrated ferroelectrics (01.01.2004)
Published in Integrated ferroelectrics (01.01.2004)
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Modeling of dynamic response of ferroelectric capacitors
Tamura, Tetsuro, Arimoto, Yoshihiro, Ishiwara, Hiroshi
Published in Integrated ferroelectrics (01.01.2001)
Published in Integrated ferroelectrics (01.01.2001)
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Direct deposition of SrBi 2 Ta 2 O 9 Film on IrO 2 electrode using liquid source CVD method
Eshita, Takashi, Yamawaki, Hideki, Miyagaki, Shinji, Arimoto, Yoshihiro
Published in Integrated ferroelectrics (01.10.1999)
Published in Integrated ferroelectrics (01.10.1999)
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Analytical surface potential expression for thin-film double-gate SOI MOSFETs
Suzuki, Kunihiro, Tanaka, Tetsu, Tosaka, Yoshiharu, Horie, Hiroshi, Arimoto, Yoshihiro, Itoh, Takashi
Published in Solid-state electronics (01.02.1994)
Published in Solid-state electronics (01.02.1994)
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Thin-film quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding
Matsumoto, S., Yachi, T., Horie, H., Arimoto, Y.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
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Study on the device characteristics of a quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding
Matsumoto, S., Hiraoka, Y., Ishiyama, T., Sakai, T., Yachi, T., Yamada, I., Ito, A., Arimoto, Y.
Published in IEEE transactions on electron devices (01.09.1998)
Published in IEEE transactions on electron devices (01.09.1998)
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