Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography
MATSUHATA, HIROHUMI, YAMAGUCHI, HIROTAKA, SEKIGUCHI, TAKASHI, CHEN, BIN, SASAKI, MASAYUKI, OHNO, TOSHIYUKI, SUZUKI, TAKUMA, HATAKEYAMA, TETSUO, TSUJI, TAKASHI, YONEZAWA, YOSHIYUKI, ARAI, KAZUO
Published in Electrical engineering in Japan (01.11.2016)
Published in Electrical engineering in Japan (01.11.2016)
Get full text
Journal Article
Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas
Miura, Yutaka, Habuka, Hitoshi, Katsumi, Yusuke, Oda, Satoko, Fukai, Yasushi, Fukae, Katsuya, Kato, Tomohisa, Okumura, Hajime, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.12.2007)
Published in Japanese Journal of Applied Physics (01.12.2007)
Get full text
Journal Article
Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor
Nishizawa, Shin-ichi, Kojima, Kazutoshi, Kuroda, Satoshi, Arai, Kazuo, Pons, Michel
Published in Journal of crystal growth (01.02.2005)
Published in Journal of crystal growth (01.02.2005)
Get full text
Journal Article
Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer
Kojima, Kazutoshi, Kuroda, Satoshi, Okumura, Hajime, Arai, Kazuo
Published in Microelectronic engineering (2006)
Published in Microelectronic engineering (2006)
Get full text
Journal Article
Conference Proceeding
Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors
Takatsuka, Akio, Tanaka, Yasunori, Yano, Koji, Yatsuo, Tsutomu, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.03.2010)
Published in Japanese Journal of Applied Physics (01.03.2010)
Get full text
Journal Article
The presence of candidate tumor suppressor gene loci at chromosome 3p for oral squamous cell carcinomas
Arai, Kazuo, Shibahara, Takahiko, Yamamoto, Nobuharu, Noma, Hiroyasu
Published in Oral oncology (01.12.2002)
Published in Oral oncology (01.12.2002)
Get full text
Journal Article
High-quality Schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance
HOONJOO NA, HYEONGJOON KIM, ADACHI, Kazuhiro, KIRITANI, Norihiko, TANIMOTO, Satoshi, OKUSHI, Hideyo, ARAI, Kazuo
Published in Journal of electronic materials (01.02.2004)
Published in Journal of electronic materials (01.02.2004)
Get full text
Journal Article
The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
Ohshima, Takeshi, Lee, Kin Kiong, Ishida, Yuuki, Kojima, Kazutoshi, Tanaka, Yasunori, Takahashi, Tetsuo, Yoshikawa, Masahito, Okumura, Hajime, Arai, Kazuo, Kamiya, Tomihiro
Published in Japanese Journal of Applied Physics (15.06.2003)
Published in Japanese Journal of Applied Physics (15.06.2003)
Get full text
Journal Article
Healing defects in SiC wafers by liquid-phase epitaxy in Si melts
Khan, M.Nasir, Nishizawa, Shin-ichi, Arai, Kazuo
Published in Journal of crystal growth (01.06.2003)
Published in Journal of crystal growth (01.06.2003)
Get full text
Journal Article
In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System
Tomohisa Kato, Shin-ichi Nishizawa, Hirotaka Yamaguchi, Kazuo Arai
Published in 稀土学报（英文版） (01.03.2006)
Get full text
Published in 稀土学报（英文版） (01.03.2006)
Journal Article