Initial boron growth on GaN and AlN surfaces by molecular beam epitaxy
Farivar, Rashid, Andersson, Thorvald G.
Published in Physica Status Solidi (C) Current Topics in Solid State Physics (01.01.2010)
Published in Physica Status Solidi (C) Current Topics in Solid State Physics (01.01.2010)
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Waveguides for nitride based quantum cascade lasers
Stattin, Martin, Berland, Kristian, Hyldgaard, Per, Larsson, Anders, Andersson, Thorvald G.
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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Porphyrin doping of Alq3 for electroluminescence
Andreasson, Måns H., Mårtensson, Jerker, Andersson, Thorvald G.
Published in Current applied physics (01.03.2008)
Published in Current applied physics (01.03.2008)
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Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy
KIM, Hyonju, FALTH, Fredrik J, ANDERSSON, Thorvald G
Published in Journal of electronic materials (01.10.2001)
Published in Journal of electronic materials (01.10.2001)
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Undoped Ga1-xInxSb grown by molecular beam epitaxy on GaAs substrates
ROSLUND, J. H, SWENSON, G, ANDERSSON, T. G
Published in Japanese journal of applied physics (15.02.1997)
Published in Japanese journal of applied physics (15.02.1997)
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Quantum well local-to-global state transitions under an electric field
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Characterization of InAlAs/InGaAs HFETs with High Indium Content in the Channel Grown on GaAs Substrate
Rorsman, Niklas, Karlsson, Christer, Zirath, Herbert, Wang, Shumin M., Andersson, Thorvald G.
Published in 23rd European Solid State Device Research Conference, ESSDERC 1993 (01.09.1993)
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Published in 23rd European Solid State Device Research Conference, ESSDERC 1993 (01.09.1993)
Conference Proceeding
Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy
Liu, Xinju, Jänes, Peter, Holmström, Petter, Aggerstam, Thomas, Lourdudoss, Sebastian, Thylén, Lars, Andersson, Thorvald
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN
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Investigation of intersubband absorption in GaN/AlN multiple quantum wells grown on different substrates by molecular beam epitaxy
Liu, X.Y., Aggerstam, T., Jänes, P., Holmström, P., Lourdudoss, S., Thylén, L., Andersson, T.G.
Published in Journal of crystal growth (01.04.2007)
Published in Journal of crystal growth (01.04.2007)
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