Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties
Nozaki, Mikito, Watanabe, Kenta, Yamada, Takahiro, Shih, Hong-An, Nakazawa, Satoshi, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors
Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.03.2019)
Published in Japanese Journal of Applied Physics (01.03.2019)
Get full text
Journal Article
SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors
Morita, T, Tamura, S, Anda, Y, Ishida, M, Uemoto, Y, Ueda, T, Tanaka, T, Ueda, D
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
Get full text
Conference Proceeding
Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
Nakazawa, Satoshi, Shiozaki, Nanako, Negoro, Noboru, Tsurumi, Naohiro, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo
Published in Japanese Journal of Applied Physics (01.09.2017)
Published in Japanese Journal of Applied Physics (01.09.2017)
Get full text
Journal Article
High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors
Umeda, H., Takizawa, T., Anda, Y., Ueda, T., Tanaka, T.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
Get full text
Journal Article
Effects of post-deposition annealing in O 2 on threshold voltage of Al 2 O 3 /AlGaN/GaN MOS heterojunction field-effect transistors
Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.03.2019)
Published in Japanese Journal of Applied Physics (01.03.2019)
Get full text
Journal Article
Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment
Yamada, Takahiro, Watanabe, Kenta, Nozaki, Mikito, Shih, Hong-An, Nakazawa, Satoshi, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
SiO 2 /AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
SiO^sub 2^/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors
Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
Umeda, H, Suzuki, A, Anda, Y, Ishida, M, Ueda, T, Tanaka, T, Ueda, D
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
Get full text
Conference Proceeding
A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array
Arase, Hidekazu, Matsushita, Akio, Itou, Akihiro, Asano, Tetsuya, Hayashi, Nobuhiko, Inoue, Daijiro, Futakuchi, Ryutaro, Inoue, Kazuo, Nakagawa, Tohru, Yamamoto, Masaki, Fujii, Eiji, Anda, Yoshiharu, Ishida, Hidetoshi, Ueda, Tetsuzo, Fidaner, Onur, Wiemer, Michael, Ueda, Daisuke
Published in IEEE journal of photovoltaics (01.03.2014)
Published in IEEE journal of photovoltaics (01.03.2014)
Get full text
Journal Article
A1W power consumption GaN-based isolated gate driver for a 1.0 MHz GaN power system
Songbek Che, Nagai, Shuichi, Negoro, Noboru, Kawai, Yasufumi, Tabata, Osamu, Enomoto, Shingo, Anda, Yoshiharu, Hatsuda, Tsuguyasu
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Get full text
Conference Proceeding
SEMICONDUCTOR DEVICE
ANDA, Yoshiharu, WATANABE, Heiji, SHIH, Hong-An, NAKAZAWA, Satoshi, TSURUMI, Naohiro, HOSOI, Takuji, SHIMURA, Takayoshi, YAMADA, Takahiro, NOZAKI, Mikito
Year of Publication 10.01.2019
Get full text
Year of Publication 10.01.2019
Patent
High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board
Itou, Akihiro, Asano, Tetsuya, Inoue, Daijiro, Arase, Hidekazu, Matsushita, Akio, Hayashi, Nobuhiko, Futakuchi, Ryutaro, Inoue, Kazuo, Yamamoto, Masaki, Fujii, Eiji, Nakagawa, Tohru, Anda, Yoshiharu, Ishida, Hidetoshi, Ueda, Tetsuzo, Fidaner, Onur, Wiemer, Michael, Ueda, Daisuke
Published in Japanese Journal of Applied Physics (2014)
Published in Japanese Journal of Applied Physics (2014)
Get full text
Journal Article