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Published in Japanese Journal of Applied Physics (01.08.2012)
Published in Japanese Journal of Applied Physics (01.08.2012)
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Journal Article
200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
Nakazawa, Satoshi, Tsurumi, Naohiro, Nishijima, Masaaki, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi
Published in Japanese Journal of Applied Physics (01.08.2012)
Published in Japanese Journal of Applied Physics (01.08.2012)
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Journal Article
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A low-impedance coplanar waveguide using an SrTiO3 thin film for GaAs power MMIC's
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