Search Results - "ANDA, Yoshiharu" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

by Yamada, Takahiro, Ito, Joyo, Asahara, Ryohei, Watanabe, Kenta, Nozaki, Mikito, Nakazawa, Satoshi, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Journal of applied physics (21.01.2017)

Get full text

Journal Article

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

by Nozaki, Mikito, Watanabe, Kenta, Yamada, Takahiro, Shih, Hong-An, Nakazawa, Satoshi, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)

Get full text

Journal Article

Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

by Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.03.2019)

Get full text

Journal Article

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

by Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)

Get full text

Journal Article

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

by Morita, T, Tamura, S, Anda, Y, Ishida, M, Uemoto, Y, Ueda, T, Tanaka, T, Ueda, D
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)

Get full text

Conference Proceeding

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

by Nakazawa, Satoshi, Shiozaki, Nanako, Negoro, Noboru, Tsurumi, Naohiro, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo
Published in Japanese Journal of Applied Physics (01.09.2017)

Get full text

Journal Article

Quantum analysis of hole distribution in multiple-delta-doped diamond with a deep impurity level

Quantum analysis of hole distribution in multiple-delta-doped diamond with a deep impurity level

by ANDA, Y, ARIKI, T, KOBAYASHI, T
Published in Japanese Journal of Applied Physics (01.08.1995)

Get full text

Journal Article

High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

by Umeda, H., Takizawa, T., Anda, Y., Ueda, T., Tanaka, T.
Published in IEEE transactions on electron devices (01.02.2013)

Get full text

Journal Article

Effects of post-deposition annealing in O 2 on threshold voltage of Al 2 O 3 /AlGaN/GaN MOS heterojunction field-effect transistors

Effects of post-deposition annealing in O 2 on threshold voltage of Al 2 O 3 /AlGaN/GaN MOS heterojunction field-effect transistors

by Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.03.2019)

Get full text

Journal Article

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

by Yamada, Takahiro, Watanabe, Kenta, Nozaki, Mikito, Shih, Hong-An, Nakazawa, Satoshi, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)

Get full text

Journal Article

SiO 2 /AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

SiO 2 /AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

by Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)

Get full text

Journal Article

SiO^sub 2^/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

SiO^sub 2^/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

by Watanabe, Kenta, Terashima, Daiki, Nozaki, Mikito, Yamada, Takahiro, Nakazawa, Satoshi, Ishida, Masahiro, Anda, Yoshiharu, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2018)

Get full text

Journal Article

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

by KAIBARA, KAZUHIRO, ANDA, YOSHIHARU
Year of Publication 17.01.2013

Get full text

Patent

SCHOTTKY DIODE

SCHOTTKY DIODE

by SHIBATA, DAISUKE, ANDA, YOSHIHARU
Year of Publication 29.11.2012

Get full text

Patent

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

by Umeda, H, Suzuki, A, Anda, Y, Ishida, M, Ueda, T, Tanaka, T, Ueda, D
Published in 2010 International Electron Devices Meeting (01.12.2010)

Get full text

Conference Proceeding

Hall effect measurement and band bending calculation of hydrogenated diamond film grown by chemical vapor deposition

Hall effect measurement and band bending calculation of hydrogenated diamond film grown by chemical vapor deposition

by SHIRAKAWA, Y, ANDA, Y, MAKI, T, KOBAYASHI, T
Published in Japanese Journal of Applied Physics (01.06.1997)

Get full text

Journal Article

A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array

A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array

by Arase, Hidekazu, Matsushita, Akio, Itou, Akihiro, Asano, Tetsuya, Hayashi, Nobuhiko, Inoue, Daijiro, Futakuchi, Ryutaro, Inoue, Kazuo, Nakagawa, Tohru, Yamamoto, Masaki, Fujii, Eiji, Anda, Yoshiharu, Ishida, Hidetoshi, Ueda, Tetsuzo, Fidaner, Onur, Wiemer, Michael, Ueda, Daisuke
Published in IEEE journal of photovoltaics (01.03.2014)

Get full text

Journal Article

A1W power consumption GaN-based isolated gate driver for a 1.0 MHz GaN power system

A1W power consumption GaN-based isolated gate driver for a 1.0 MHz GaN power system

by Songbek Che, Nagai, Shuichi, Negoro, Noboru, Kawai, Yasufumi, Tabata, Osamu, Enomoto, Shingo, Anda, Yoshiharu, Hatsuda, Tsuguyasu
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)

Get full text

Conference Proceeding

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

by SUZUKI, ASAMIRA, YAMADA, YASUHIRO, ANDA, YOSHIHARU
Year of Publication 06.02.2014

Get full text

Patent

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

by ANDA, Yoshiharu, WATANABE, Heiji, SHIH, Hong-An, NAKAZAWA, Satoshi, TSURUMI, Naohiro, HOSOI, Takuji, SHIMURA, Takayoshi, YAMADA, Takahiro, NOZAKI, Mikito
Year of Publication 10.01.2019

Get full text

Patent

1
2
3
4
5
6
7
Next
[7]