The Enhancement of Etch Rate of Silicon by Heavy Doping of Phosphorus and Arsenic Atoms during Cyclic Selective Epitaxial Growth of Silicon
Lee, Kong-Soo, Kang, Yoongoo, An, Ho-Kyun, Jeong, Seonghoon, Han, Jae-Jong, Kim, Bonghyun, Nam, Seokwoo, Kang, Ho-Kyu, Jeong, Hong-Sik, Chung, Chilhee, Park, Hyunho, Choi, Byoungdeog
Published in ECS transactions (27.04.2012)
Published in ECS transactions (27.04.2012)
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Semiconductor device manufacturing method
Bang, Myeong Jin, Lee, Kong Soo, Kim, Jong Myeong, An, Ho Kyun, Hong, Sa Hwan, Choi, Han Mei
Year of Publication 31.10.2023
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Year of Publication 31.10.2023
Patent
The Enhancement of Etch Rate of Silicon by Heavy Doping of Phosphorus and Arsenic Atoms During Cyclic Selective Epitaxial Growth of Silicon
Lee, Kong-Soo, Kang, Yoongoo, An, Ho-Kyun, Jeong, Seonghoon, Han, Jae-Jong, Kim, Bonghyun, Nam, Seokwoo, Kang, Ho-Kyu, Jeong, Hong-Sik, Chung, Chilhee, Park, Hyunho, Choi, Byoungdeog
Published in Meeting abstracts (Electrochemical Society) (12.04.2012)
Published in Meeting abstracts (Electrochemical Society) (12.04.2012)
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Journal Article
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
BANG, Myeong Jin, CHOI, Han Mei, KIM, Jong Myeong, LEE, Kong Soo, AN, Ho Kyun, HONG, Sa Hwan
Year of Publication 20.10.2022
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Year of Publication 20.10.2022
Patent