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SHI, Wenguang, LU, Zhenyu, ALSMEIER, Johann, MAO, Daxin, CHIEN, Henry, ZHANG, Tong
Year of Publication 29.01.2020
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Year of Publication 29.01.2020
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METHOD OF MAKING THREE DIMENSIONAL NAND DEVICE WITH CHANNEL CONTACTING CONDUCTIVE SOURCE LINE
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Year of Publication 08.01.2020
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Year of Publication 08.01.2020
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Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devices
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Year of Publication 23.01.2018
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Year of Publication 23.01.2018
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Crystalline layer stack for forming conductive layers in a three-dimensional memory structure
Shi Stephen, Alsmeier Johann, Pachamuthu Jayavel, Baenninger Matthias, Chien Henry
Year of Publication 16.01.2018
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Year of Publication 16.01.2018
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Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings
Mushiga, Mitsuteru, Chowdhury, Murshed, Alsmeier, Johann, Zhang, Tong, Otoi, Hisakazu, Yamaguchi, Kensuke, Cui, Zhixin, Kai, James
Year of Publication 26.11.2019
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Year of Publication 26.11.2019
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MEMORY CELL WITH HIGH-K CHARGE TRAPPING LAYER
HIGASHITANI, Masaaki, RABKIN, Peter, ALSMEIER, Johann, PACHAMUTHU, Jayavel
Year of Publication 03.01.2018
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Year of Publication 03.01.2018
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METHOD OF FORMING MEMORY CELL WITH HIGH-K CHARGE TRAPPING LAYER
HIGASHITANI, Masaaki, RABKIN, Peter, ALSMEIER, Johann, PACHAMUTHU, Jayavel
Year of Publication 03.01.2018
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Year of Publication 03.01.2018
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THREE-DIMENSIONAL MEMORY DEVICE HAVING A HETEROSTRUCTURE QUANTUM WELL CHANNEL
HIGASHITANI, Masaaki, RABKIN, Peter, ALSMEIER, Johann, PACHAMUTHU, Jayavel
Year of Publication 03.01.2018
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Year of Publication 03.01.2018
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